CAJ | 학술논문

提出了一种简洁的新型4H-SiCMESFET经验大信号模型.在Materka漏电流模型基础上,改进了沟道调制因子和饱和电压系数的建模方式,电容模型采用了改进的电荷守恒模型.参数的提取和优化采用了Levenberg-Marquardt优化方法.在偏置点VDS=20V,IDS=80mA和工作频率1.8GHz下,模型直流电流-电压扫描曲线、输出功率、功率附加效率和增益的模拟结果与实验数据符合良好.
제출료일충간길적신형4H-SiCMESFET경험대신호모형.재Materka루전류모형기출상,개진료구도조제인자화포화전압계수적건모방식,전용모형채용료개진적전하수항모형.삼수적제취화우화채용료Levenberg-Marquardt우화방법.재편치점VDS=20V,IDS=80mA화공작빈솔1.8GHz하,모형직류전류-전압소묘곡선、수출공솔、공솔부가효솔화증익적모의결과여실험수거부합량호.
A new comprehensive empirical large signal model for 4H-SiC MESFETs is proposed. An enhanced drain current model,along with an improved charge conservation capacitance model,is presented by the improvement of the channel length modulation and the hyperbolic tangent function coefficient based on the Materka model. The Levenberg-Marquardt method is used to optimize the parameter extraction. A comparison of simulation results with experimental data is made, and good agreements of Ⅰ-Ⅴ curves, Pout (output power), PAE (power added efficiency), and gain at the bias of VDS = 20V, IDS = 80mA as well as the operational frequency of 1.8GHz are obtained.