半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2008年
6期
1128-1135
,共8页
倪熔华%谈熙%唐长文%闵昊
倪鎔華%談熙%唐長文%閔昊
예용화%담희%당장문%민호
正交混频器%共用跨导级%RFID阅读器%CMOS%低功耗%高线性度
正交混頻器%共用跨導級%RFID閱讀器%CMOS%低功耗%高線性度
정교혼빈기%공용과도급%RFID열독기%CMOS%저공모%고선성도
quadrature mixer%shared transconductor stage%RFID reader%CMOS%low power%high linearity
分析了共用跨导级的正交下变频混频器的性能,包括电压转换增益、线性度、噪声系数和镜象抑制比,分析表明其在电流开关模式下比传统的Gilbert混频器对具有更好的性能.设计并优化了一个基于共用跨导级结构的用于超高频RFID阅读器的正交下变频混频器.在915MHz频段上,该混频器测得12.5dB的转换增益,10dBm的ⅡP3,58dBm的ⅡP2和17.6dB的SSB噪声系数.芯片采用0.18μm 1P6M RF CMOS工艺实现,在1.8V的电源电压下仅消耗3mA电流.
分析瞭共用跨導級的正交下變頻混頻器的性能,包括電壓轉換增益、線性度、譟聲繫數和鏡象抑製比,分析錶明其在電流開關模式下比傳統的Gilbert混頻器對具有更好的性能.設計併優化瞭一箇基于共用跨導級結構的用于超高頻RFID閱讀器的正交下變頻混頻器.在915MHz頻段上,該混頻器測得12.5dB的轉換增益,10dBm的ⅡP3,58dBm的ⅡP2和17.6dB的SSB譟聲繫數.芯片採用0.18μm 1P6M RF CMOS工藝實現,在1.8V的電源電壓下僅消耗3mA電流.
분석료공용과도급적정교하변빈혼빈기적성능,포괄전압전환증익、선성도、조성계수화경상억제비,분석표명기재전류개관모식하비전통적Gilbert혼빈기대구유경호적성능.설계병우화료일개기우공용과도급결구적용우초고빈RFID열독기적정교하변빈혼빈기.재915MHz빈단상,해혼빈기측득12.5dB적전환증익,10dBm적ⅡP3,58dBm적ⅡP2화17.6dB적SSB조성계수.심편채용0.18μm 1P6M RF CMOS공예실현,재1.8V적전원전압하부소모3mA전류.
A quadrature mixer with a shared transconductor stage is analyzed, including voltage conversion gain, linearity,noise figure, and image rejection. The analysis indicates it has better performance than a conventional Gilbert mixer pair in commutating mode. A quadrature down-conversion mixer based on this topology is designed and optimized for an ultra high frequency RFID reader. Operating in the 915MHz ISM band,the presented quadrature mixer measures a conversion gain of 12.5dB,an ⅡP3 of 10dBm, an ⅡP2 of 58dBm, and an SSB noise figure of 17.6dB. The chip was fabricated in a 0.18μm 1PfM RF CMOS process and consumes only 3mA of current from a 1.8V power supply.
