CAJ | 학술논문

通过分析InGaP/GsAs HBT器件的热学和电学特点,结合HBT大功率放大器芯片在技术性能、稳定性、可靠性及尺寸等方面的要求,通过优化设计HBT功率器件单元和匹配电路,开发了一个大功率、高效率、小尺寸的ISM波段功率放大器单片集成电路.该三级放大器的各级器件单元的发射极面积分别为320 μm~2,1 280μm~2,5 760μm~2,芯片内部包括了输入、输出50 Ω匹配电路.面积仅为1.9mm×2.1 mm.放大器采用5 V单电源供电,在2.4～2.5 GHz频率范围内线性增益为27 dB,2 dB增益压缩点输出饱和功率达到37 dBm,功率附加效率为46%.
통과분석InGaP/GsAs HBT기건적열학화전학특점,결합HBT대공솔방대기심편재기술성능、은정성、가고성급척촌등방면적요구,통과우화설계HBT공솔기건단원화필배전로,개발료일개대공솔、고효솔、소척촌적ISM파단공솔방대기단편집성전로.해삼급방대기적각급기건단원적발사겁면적분별위320 μm~2,1 280μm~2,5 760μm~2,심편내부포괄료수입、수출50 Ω필배전로.면적부위1.9mm×2.1 mm.방대기채용5 V단전원공전,재2.4～2.5 GHz빈솔범위내선성증익위27 dB,2 dB증익압축점수출포화공솔체도37 dBm,공솔부가효솔위46%.
The thermal and electrical performance of the InGaP/GsAs HBT device was analyzed. Considering the characteristic of good high power HBT amplifier chip, such as the performance, stability, reliability and size, an optimized HBT power cell and matching circuit were designed. A high-power, high efficient and small size ISM band MMIC power amplifier was developed. The three-stage MMIC amplifier fabricated with 320μm~2, 1 280μm~2, 5 760/μm~2 emitter area and the die size including the input and output 50Ω matching circuit is 1.9mm × 2.1 mm. When powered by a single 5 V power supply, it exhibits an output power of 37 dBm at 2 dB of gain compression point, a linear gain of 27 dB and an associated PAE of 46% in the frequency range of 2.4 to 2.5 GHz.