有机硅材料
有機硅材料
유궤규재료
SILICONE MATERIAL
2009年
4期
246-249
,共4页
乙烯基聚硅氮烷%热裂解过程%热失重%氮化硅
乙烯基聚硅氮烷%熱裂解過程%熱失重%氮化硅
을희기취규담완%열렬해과정%열실중%담화규
vinyl-polysilazane%pyrolytic process%weight lose%silicon nitride
通过TG、IR、XRD等实验手段,研究分析了含乙烯基聚硅氮烷(PSN-1)在0~1000℃范围内热裂解过程的特性.实验表明,PSN-1的热裂解过程可分为三个阶段:第一阶段为0~260℃,该阶段质量损失率较大(48%),主要以小分子挥发为主;第二阶段为260~700℃,该阶段PSN-1中的C=C双键开始发生交联,至500℃已基本交联完全,质量损失率相对较小,至700℃质量损失率为58%;第三阶段700~1000℃.基本上已没有有机基团,完成无机化转变过程.裂解温度及保温时间对Si3N4晶体生成都有影响,提高裂解温度和延长保温时间可以进一步获得数量较多的α-Si3N4晶体.
通過TG、IR、XRD等實驗手段,研究分析瞭含乙烯基聚硅氮烷(PSN-1)在0~1000℃範圍內熱裂解過程的特性.實驗錶明,PSN-1的熱裂解過程可分為三箇階段:第一階段為0~260℃,該階段質量損失率較大(48%),主要以小分子揮髮為主;第二階段為260~700℃,該階段PSN-1中的C=C雙鍵開始髮生交聯,至500℃已基本交聯完全,質量損失率相對較小,至700℃質量損失率為58%;第三階段700~1000℃.基本上已沒有有機基糰,完成無機化轉變過程.裂解溫度及保溫時間對Si3N4晶體生成都有影響,提高裂解溫度和延長保溫時間可以進一步穫得數量較多的α-Si3N4晶體.
통과TG、IR、XRD등실험수단,연구분석료함을희기취규담완(PSN-1)재0~1000℃범위내열렬해과정적특성.실험표명,PSN-1적열렬해과정가분위삼개계단:제일계단위0~260℃,해계단질량손실솔교대(48%),주요이소분자휘발위주;제이계단위260~700℃,해계단PSN-1중적C=C쌍건개시발생교련,지500℃이기본교련완전,질량손실솔상대교소,지700℃질량손실솔위58%;제삼계단700~1000℃.기본상이몰유유궤기단,완성무궤화전변과정.렬해온도급보온시간대Si3N4정체생성도유영향,제고렬해온도화연장보온시간가이진일보획득수량교다적α-Si3N4정체.
The characteristics of pyrolytic process of vinyl-containing polysilazane in the temperature range of 0~1000℃ was investigated by TG,IR,and XRD.It was found that the pyrolytic process consisted of three stages.In the first stage (0~260℃) weight loss was about 48%,mainly from volatilization of small molecules ; in the second stage the weight loss was small,the C=C bond began to crosslink and completed by 500℃,the total weight loss was 58% by 700℃; and in the last stage the transformation from organic materials to mineral was accomplished.More α-Si3N4 crystalloids were obtained by increasing the temperature of pyrolytic and extending time of pyrolytic temperature.