半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2007年
z1期
41-43
,共3页
张杨%曾一平%马龙%王保强%朱战平%王良臣%杨富华
張楊%曾一平%馬龍%王保彊%硃戰平%王良臣%楊富華
장양%증일평%마룡%왕보강%주전평%왕량신%양부화
共振隧穿二极管%InP基%分子束外延
共振隧穿二極管%InP基%分子束外延
공진수천이겁관%InP기%분자속외연
resonant tunneling diode%InP substrate%molecular beam epitaxy
利用分子束外延技术研制出InP基IhAs/In0.53Ga0.47As/AlAs共振隧穿二极管,其中势垒为10个单分子AlAs,势阱由8个单分子层In0.53Ga0.47As阱和4个单分子层InAs子阱组成.室温下峰值电流密度接近3kA/cm2,峰和谷的电流密度比率达到19.
利用分子束外延技術研製齣InP基IhAs/In0.53Ga0.47As/AlAs共振隧穿二極管,其中勢壘為10箇單分子AlAs,勢阱由8箇單分子層In0.53Ga0.47As阱和4箇單分子層InAs子阱組成.室溫下峰值電流密度接近3kA/cm2,峰和穀的電流密度比率達到19.
이용분자속외연기술연제출InP기IhAs/In0.53Ga0.47As/AlAs공진수천이겁관,기중세루위10개단분자AlAs,세정유8개단분자층In0.53Ga0.47As정화4개단분자층InAs자정조성.실온하봉치전류밀도접근3kA/cm2,봉화곡적전류밀도비솔체도19.
We report InAs/In0.53Ga0.47As/AlAs resonant tunneling diodes (RTDs) grown on InP substrate by molecular beam epitaxy. The peak to valley current ratio of these devices is 19 at 300K. A peak current density of 3kA/cmz is obtained for RTDs with AlAs barriers of ten monolayers and an In0.53Ga0.47As well of eight monolayers with a four-monolayer InAs insert-layer.
