半导体微腔中单量子点的真空拉比分裂的温度效应
반도체미강중단양자점적진공랍비분렬적온도효응
Temperature Dependence of Vacuum Rabi Splitting in a Single Quantum Dot-Semiconductor Microcavity
  • 万方数据
    半导体学报 반도체학보
    CHINESE JOURNAL OF SEMICONDUCTORS
    2006年 3期 489-493 ,共5页

    朱卡的%李惠生

    주잡적%리혜생

    半导体微腔%量子点%激子%真空拉比分裂 半導體微腔%量子點%激子%真空拉比分裂
    반도체미강%양자점%격자%진공랍비분렬
    semiconductor microcavity%quantum dot%exciton%Vacuum Rabi splitting
    采用量子光学和极化子正则变换的方法研究了有限温度下半导体微腔中单量子点的激子动力学行为,并解析得到了激子真空拉比分裂随温度变化的函数关系.
    채용양자광학화겁화자정칙변환적방법연구료유한온도하반도체미강중단양자점적격자동역학행위,병해석득도료격자진공랍비분렬수온도변화적함수관계.
    The quantum dynamics of an exciton dressed by acoustic phonons in an optically driven quantum dotsemiconductor microcavity at finite temperatures is investigated theoretically by quantum optics methods. It is shown that the temperature dependence of the vacuum Rabi splitting is 2√2 g × exp[ - ∑qλq (Nq + 1/2)], where Nq = 1/[exp(ωq/kBT) - 1] is the phonon population, g is the single-photon Rabi frequency, and λq corresponds to exciton-phonon coupling.
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