CAJ | 학술논문

采用新近研制的高真空／快速热处理／化学气相淀积（HV／RTP／CVD）系统生长了应变SiGe材料．通过仔细设计的处理过程可以得到器件质量的材料．Ge组分可以变化至0.25，可以得到控制良好的n型和p型掺杂层，适用于异质结双极型晶体管(HBT)的制作．研究了SiGe HBT的n-Si／i-p＋-i SiGe／n-Si结构．所制作出的微波HBT性能良好，证明了设备和工艺的水平．
채용신근연제적고진공／쾌속열처리／화학기상정적（HV／RTP／CVD）계통생장료응변SiGe재료．통과자세설계적처리과정가이득도기건질량적재료．Ge조분가이변화지0.25，가이득도공제량호적n형화p형참잡층，괄용우이질결쌍겁형정체관(HBT)적제작．연구료SiGe HBT적n-Si／i-p＋-i SiGe／n-Si결구．소제작출적미파HBT성능량호，증명료설비화공예적수평．
The strained SiGe material has been grown by using the newly developed High Vacuum/Rapid Thermal Processing／Chemical Vapor Deposition (HV/RTP/CVD) system.Device-quality material is grown by handling process after careful design. The Ge fraction varies up to 0.25, and the n and p type doping is well controlled,which are both adapted to the fabrication of Heterojunction Bipolar Transistors (HBT). The SiGe HBT structure, namely n-Si/i-p+-i SiGe/n-Si structure, has been investigated, with which, the HBTs are fabricated and show good performance. The new system has been proved potential and practicable.