CAJ | 학술논문

通过FT-IR、XPS和荧光光谱研究了离子注入对纳米Si3N4结构的影响.发现离子注入改变了材料中游离硅(a-Si)的结构,使其变成了SiNn(n=1,2).荧光谱研究表明纳米Si3N4具有明显的量子限制效应,并且荧光峰的位置和强度存在不稳定性.根据实验结果给出了纳米Si3N4的能级结构图.
통과FT-IR、XPS화형광광보연구료리자주입대납미Si3N4결구적영향.발현리자주입개변료재료중유리규(a-Si)적결구,사기변성료SiNn(n=1,2).형광보연구표명납미Si3N4구유명현적양자한제효응,병차형광봉적위치화강도존재불은정성.근거실험결과급출료납미Si3N4적능급결구도.
The effects of ion implantation on the structure of nano-Si3N4 was studied by means of FT-IR,XPS and photoluminescence spectra.The energy level scheme and the energy structure of nano-Si3N4 were given.The results show that ion implantation makes free Si in the material change to SiNn(n=1,2),and nano-Si3N4 possesses a quantum confinement effect,and its photo-luminescence peak position and intensity are unstable.