CAJ | 학술논문

用Ar+束溅射沉积技术实现了CdTe薄膜的低温沉积生长。用X射线光电子能谱(XPS)分析技术对溅射沉积CdTe薄膜以及CdTe体晶中的Cd元素、Te元素化学环境进行了对比实验研究。实验表明：溅射沉积CdTe薄膜具有很好的组份均匀性，未探测到有元素(Cd、Te)沉积存在。
용Ar+속천사침적기술실현료CdTe박막적저온침적생장。용X사선광전자능보(XPS)분석기술대천사침적CdTe박막이급CdTe체정중적Cd원소、Te원소화학배경진행료대비실험연구。실험표명：천사침적CdTe박막구유흔호적조빈균균성，미탐측도유원소(Cd、Te)침적존재。
The CdTe film was grown by using the low-temperature ion beam sputtering technique. The Cd and Te elements in the sputtering CdTe film sample were studied and compared with those in the CdTe bulk using X-ray photoelectron spectroscopy (XPS) technique. It is proved that the constituent elements in the sputtering CdTe film are homogeneous. No element deposition (Cd, Te) is detceted.