CAJ | 학술논문

研究了4H-SiC低缺陷密度外延层的制造和Ni/SiC肖特基势垒二极管的正、反向电学特性.采用了偏8°4H-SiC衬底上台阶控制外延方法进行同质外延,外延温度1 580℃,最后得到了低缺陷密度的3英寸外延片.采用了原子力显微镜和扫描电子显微镜进行了测试.在外延片上进行的Ni/4H-SiC肖特基势垒二极管的制造,采用了B+离子注入形成的一个非晶区域作为边缘终端,然后使用经过1 000℃下退火10 min的PECVD生长的SiO_2作为场板介质.最终得到的Ni/4H-SiC肖特基势垒二极管的理想因子为1.03,势垒高度为1.6 eV,在反向偏压1 102 V时,漏电流密度只有1.15×10~(-3)A/cm~2.在正向压降3.5 V时得到了7.47 A的大电流输出,特征导通电阻为6.22 Ω·cm~2.
연구료4H-SiC저결함밀도외연층적제조화Ni/SiC초특기세루이겁관적정、반향전학특성.채용료편8°4H-SiC츤저상태계공제외연방법진행동질외연,외연온도1 580℃,최후득도료저결함밀도적3영촌외연편.채용료원자력현미경화소묘전자현미경진행료측시.재외연편상진행적Ni/4H-SiC초특기세루이겁관적제조,채용료B+리자주입형성적일개비정구역작위변연종단,연후사용경과1 000℃하퇴화10 min적PECVD생장적SiO_2작위장판개질.최종득도적Ni/4H-SiC초특기세루이겁관적이상인자위1.03,세루고도위1.6 eV,재반향편압1 102 V시,루전류밀도지유1.15×10~(-3)A/cm~2.재정향압강3.5 V시득도료7.47 A적대전류수출,특정도통전조위6.22 Ω·cm~2.
This paper describes the growth of epitaxial 4H-SiC layers with low defect density and the fabrication and electrical characteristics of Ni/SiC Schottky barrier diodes (SBDs). Homoepitaxial growth of 4H-SiC on 8° off-oriented Si-face(0001) 4H-SiC substrates was performed at 1 580℃ by using the step controlled epitaxy. The resulting epilayers of 3＂wafer exhibit low defect density. We evaluated the surface characteristics of epilayers by atomic force microscope (AFM) and scanning electron microscope(SEM) measurements. By using B+implantation, an amorphous layer as the edge termination was formed. And we used the PECVD SiO_2 that was annealed for 10 minutes at 1 000℃ as the field plate dielectric. The ideality factor n=1.03, effective Schottky barrier height Φ=1.6 eV of the Ni/4H-SiC SBDs were measured with method of forward current density-voltage (J-V). A very low reverse leakage current below 1.15×10~(-5)A/cm~2 at the bias voltage of-1 102 V was obtained. The Ni/4H-SiC SBDs have an on-state large current of 7.47 A at a forward voltage drop of 3.5 V. The specific on-resistance R_(on) for the Ni/4H-SiC SBD is found to be 6.22 mΩ·cm~2.