CAJ | 학술논문

对蓝宝石衬底上的InGaN/GaN和InGaN/AlGaN多量子阱结构和经激光剥离去除衬底的InGaN/GaN和InGaN/AlGaN多量子阱结构薄膜样品,进行了光致发光谱、高分辨XRD和喇曼光谱测量.PL测量结果表明,相对于带有蓝宝石衬底的样品,InGaN/GaN多量子阱薄膜样品的PL谱峰值波长发生较小的蓝移,而InGaN/AlGaN多量子阱薄膜样品的PL谱峰值波长发生明显的红移;喇曼光谱的结果表明,激光剥离前后E2模的峰值从569.1减少到567.5cm-1.这说明激光剥离去除衬底使得外延层整体的压应力得到部分释放,但InGaN/GaN与InGaN/AlGaN多量子阱结构中阱层InGaN的应力发生了不同的变化.XRD的结果证实了这一结论.
대람보석츤저상적InGaN/GaN화InGaN/AlGaN다양자정결구화경격광박리거제츤저적InGaN/GaN화InGaN/AlGaN다양자정결구박막양품,진행료광치발광보、고분변XRD화나만광보측량.PL측량결과표명,상대우대유람보석츤저적양품,InGaN/GaN다양자정박막양품적PL보봉치파장발생교소적람이,이InGaN/AlGaN다양자정박막양품적PL보봉치파장발생명현적홍이;나만광보적결과표명,격광박리전후E2모적봉치종569.1감소도567.5cm-1.저설명격광박리거제츤저사득외연층정체적압응력득도부분석방,단InGaN/GaN여InGaN/AlGaN다양자정결구중정층InGaN적응력발생료불동적변화.XRD적결과증실료저일결론.
Photoluminescence,HR-XRD,and Raman scattering spectra of InGaN/GaN MQWs and InGaN/AlGaN on sapphire and membranes with no substrate fabricated by laser lift-off are studied. In contrast to the emission peak from the membrane samples of InGaN/GaN MQWs, which blue-shifts after annealing at 700℃, a red-shift of the PL peak position in the InGaN/AlGaN MQW membrane sample is observed,showing different strain effects in these MQWs. In Raman scattering spectra,the InGaN/GaN MQW film without sapphire substrate has a lower E2mode frequency (567. 5cm-1) than that of the films with substrate (569. 1cm-1),which indicates that the compressive stress in the films is released partially when the sapphire substrate is taken off.