CAJ | 학술논문

利用离子注入结合后续高温退火的方法成功地制备出包埋在二氧化硅(SiO_2)基质中的硅纳米晶.利用透射电子显微学对所制备的硅纳米晶(离子注入浓度为3×10~(17)cm~(-2))的微观结构缺陷进行了详细的研究.通过高分辨像分析发现:较大的纳米晶(直径＞6nm)中存在很多面缺陷,主要为孪晶与层错.孪晶包括一次孪晶、二重孪晶、三重孪晶及五重孪晶.层错分为内禀和外禀两种类型,并讨论了内禀层错占多数的原因.除了面缺陷以外,还有一部分纳米晶中存在位错.
이용리자주입결합후속고온퇴화적방법성공지제비출포매재이양화규(SiO_2)기질중적규납미정.이용투사전자현미학대소제비적규납미정(리자주입농도위3×10~(17)cm~(-2))적미관결구결함진행료상세적연구.통과고분변상분석발현:교대적납미정(직경＞6nm)중존재흔다면결함,주요위련정여층착.련정포괄일차련정、이중련정、삼중련정급오중련정.층착분위내품화외품량충류형,병토론료내품층착점다수적원인.제료면결함이외,환유일부분납미정중존재위착.
Si nanocrystals (Si nc) have been successfully fabricated in SiO_2 film using Si~+ ion implantation followed by high-temperature annealing. The microstructural defects inside the Si nc (the implantation dose is 3×10~(17)cm~(-2)) have been thoroughly investigated using transmission electron microscopy. High-resolution transmission electron microscopy (HRTEM) observations showed that planar defects such as twinning and stacking faults are dominant. The twins include single-twin,double-twin,triple-twin and five-fold twinning. The stacking faults include intrinsic and extrinsic. More intrinsic stacking faults have been found,and the possible reasons are discussed. Besides the planar defects,mismatch dislocations are also found to exist in some Si nc.