CAJ | 학술논문

利用射频磁控溅射法在玻璃衬底上制备了Ga掺杂的TiO_2薄膜,并在真空中于550℃下进行了2 h的退火处理.采用XRD、SEM、UV-Vis和PL光谱对薄膜进行了表征.XRD结果提示,在溅射功率为200 W,室温下制备的TiO_2薄膜具有混晶结构,且退火后的晶粒有长大的趋势.SEM分析表明.掺Ga薄膜的颗粒分布得较为均匀并存在尺寸变小的趋势,且出现有利于提高光催化性能的岛状结构,其平均颗粒尺寸为50 nm.UV-Vis透过谱指出,掺Ga后的TiO_2薄膜吸收边发生了明显红移,且退火后进一步红移了10～50 nm.通过接触角的测量与计算可知,550℃退火2 h后的薄膜具有良好的亲水性.光催化降解结果表明:样品具有较强的光催化能力.当用低功率(15 W)紫外灯照射8 h后,Ga掺杂的纳米TiO_2薄膜样品对亚甲基蓝溶液的降解率最高可达到71.8%.
이용사빈자공천사법재파리츤저상제비료Ga참잡적TiO_2박막,병재진공중우550℃하진행료2 h적퇴화처리.채용XRD、SEM、UV-Vis화PL광보대박막진행료표정.XRD결과제시,재천사공솔위200 W,실온하제비적TiO_2박막구유혼정결구,차퇴화후적정립유장대적추세.SEM분석표명.참Ga박막적과립분포득교위균균병존재척촌변소적추세,차출현유리우제고광최화성능적도상결구,기평균과립척촌위50 nm.UV-Vis투과보지출,참Ga후적TiO_2박막흡수변발생료명현홍이,차퇴화후진일보홍이료10～50 nm.통과접촉각적측량여계산가지,550℃퇴화2 h후적박막구유량호적친수성.광최화강해결과표명:양품구유교강적광최화능력.당용저공솔(15 W)자외등조사8 h후,Ga참잡적납미TiO_2박막양품대아갑기람용액적강해솔최고가체도71.8%.
The gallium-doped TiO_2 thin films were deposited on glass substrate by Radio Frequency(RF) magnetron sputtering, and annealing treated in vacuum for 2 h at 550℃. The films were characterized using XRD, SEM, UV-Vis transmission spectraoscopy. XRD results show that the TiO_2 thin films change to mixed crystal with sputtering power of 200 W at room temperature, and the gains have grown up trend after annealing. SEM results reveal that Ga-doped thin films have a more uniform and smaller particle size distribution with an average size of 30 nm. The surface morphology is land-like. UV-Vis transmission spectra show that the absorption edge of the Ga-doped thin films occurs obviously red-shifted, and even a red-shift of 10～50 nm is found after annealing. The films have good hydrophilicity as evidenced by contact angle measurement and calculation. The samples exibit good photocatalytic activity as shown by the degradation rate of 71.8% for methylene blue solution after 8 h irradiation under low power UV lamp(15 W).