CAJ | 학술논문

采用电子束设备对多晶硅进行熔炼,设计熔炼功率和时间相同、降束时间不同的三组实验,评价硅中杂质磷在熔炼及凝固过程中的去除效果.根据熔炼后硅锭的杂质分布特点推导出表征硅中杂质磷的去除率公式,经计算得到去除率为80%以上,并由磷的蒸发方程计算出在本实验中当电子束熔炼多晶硅锭的束流密度在235mA之上时,硅中的磷都可以被蒸发去除.
채용전자속설비대다정규진행용련,설계용련공솔화시간상동、강속시간불동적삼조실험,평개규중잡질린재용련급응고과정중적거제효과.근거용련후규정적잡질분포특점추도출표정규중잡질린적거제솔공식,경계산득도거제솔위80%이상,병유린적증발방정계산출재본실험중당전자속용련다정규정적속류밀도재235mA지상시,규중적린도가이피증발거제.
In order to evaluate the effect of dephosphorization in silicon during melting and solidification,three-group electron beam melting experiments with the same melting power but different time for extinguishing beam density were carried out. According to the distribution of the phosphorus content in the obtained ingot, the formulas for the estimation of the phosphorus content in silicon is developed and the removal rate of phosphorus is calculated to be over 80%. Phosphorus in silicon could be effectively removed by evaporation when the beam density is over 235mA.