CAJ | 학술논문

采用化学气相沉积法,不用催化剂,在Si(111)基片上制备了ZnO纳米线.扫描电子显微镜(SEM)表征发现ZnO纳米线的直径在100 am左右.X射线衍射(XRD)图谱上只存在ZnO的(002)衍射峰.室温下光致发光谱(PL)中出现了389 am和357 nm的紫外峰以及五个蓝光峰(450,468,474,481和491 nm).389 nm峰为自由激子复合发射357 nm峰是在LO声子的参与下,自由栽流子碰撞形成自由激子过程的发光行为;468 nm峰系电子从氧空位形成的浅施主能级向价带跃迁发光;450 nm峰系电子从导带向锌空位形成的浅受主能级跃迁发光;474,481和491 nm峰是声子伴线.
채용화학기상침적법,불용최화제,재Si(111)기편상제비료ZnO납미선.소묘전자현미경(SEM)표정발현ZnO납미선적직경재100 am좌우.X사선연사(XRD)도보상지존재ZnO적(002)연사봉.실온하광치발광보(PL)중출현료389 am화357 nm적자외봉이급오개람광봉(450,468,474,481화491 nm).389 nm봉위자유격자복합발사357 nm봉시재LO성자적삼여하,자유재류자팽당형성자유격자과정적발광행위;468 nm봉계전자종양공위형성적천시주능급향개대약천발광;450 nm봉계전자종도대향자공위형성적천수주능급약천발광;474,481화491 nm봉시성자반선.
ZnO nanowires were synthesized by self-catalytic on Si (111) substrate by CVD. Only (002) diffraction peaks of ZnO can be found on the XRD patterns of the samples. The SEM images showed that the ZnO nanowires of average diameters of 100 nm were aligned on Si substrate well. PL shows two strong ultraviolet emissions at 357 nm and 389 nm. The peak of 389 nm is attributed to the free exciton emission. Analysis indicates 357 nm is due to the collision of two free carriers with LO phonon participating. Five blue emissions at 450, 468, 474, 481 and 491 nm were observed. 450 nm corresponds to the electron transition from conduction band to the shallow level of zinc vacancy and 468 nm corresponds to the electron transition from the shallow level of oxygen vacancy to valence band. 474 nm is double phonon (2LO) sidebands of 450 nm, 481 nm is simple phonon (LO) sidebands and 491 nm is double phonon (LO + E_2 (high)) sidebands of 468 nm.