中南大学学报（英文版）
中南大學學報（英文版）
중남대학학보（영문판）
JOURNAL OF CENTRAL SOUTH UNIVERSITY OF TECHNOLOGY(ENGLISH EDITION)
2012年
2期
417-423
,共7页
1T-static random access memory%direct current-direct current converter%positive word-line voltage%negative word-line voltage%half- VDD generator
The direct current-direct current (DC-DC) converter is designed for 1 T static random access memory (SRAM) used in display driver integrated circuits (ICs),which consists of positive word-line voltage (VPWL),negative word-line voltage (VNWL) and half- VDD voltage (VHDD) generator.To generate a process voltage temperature (PVT)-insensitive VPWL and VNWL,a set of circuits were proposed to generate reference voltages using bandgap reference current generators for respective voltage level detectors.Also,a VPEL regulator and a VNWL charge pump were proposed for a small-area and low-power design.The proposed VPWL regulator can provide a large driving current with a small area since it regulates an input voltage (VCI) from 2.5 to 3.3 V.The VNWL charge pump can be implemented as a high-efficiency circuit with a small area and low power since it can transfer pumped charges to VNWL node entirely.The DC-DC converter for 1 T SRAM were designed with 0.11 μm mixed signal process and operated well with satisfactory measurement results.
