CAJ | 학술논문

研究了应用双边C-V法测量超浅结(如p~+-n结)的掺杂分布.推导了在已知p~+-n结的电容-电压(C-V_R)关系、n区掺杂、以及热平衡下n区耗尽层宽度(x_(n0))的情况下计算P区掺杂浓度分布的公式.x_(n0)是计算P区掺杂分布所需的一个关键参数,通过将n区掺杂设计成阶梯状,可实现对x_(n0)的精确提取.用Medici对具有相同的阶梯状掺杂n区的p~+-n和n-肖特基结进行器件仿真可得其C-V_R关系.运用常规C-V法,由肖特基结的C-V_R关系可提取出n区掺杂浓度.实现了对x_(n0)的精确提取,其精度达1.8 nm.基于精确的x_(n0),运用双边C-V法提取的p~+区的掺杂浓度分布与Medici仿真结果非常吻合.
연구료응용쌍변C-V법측량초천결(여p~+-n결)적참잡분포.추도료재이지p~+-n결적전용-전압(C-V_R)관계、n구참잡、이급열평형하n구모진층관도(x_(n0))적정황하계산P구참잡농도분포적공식.x_(n0)시계산P구참잡분포소수적일개관건삼수,통과장n구참잡설계성계제상,가실현대x_(n0)적정학제취.용Medici대구유상동적계제상참잡n구적p~+-n화n-초특기결진행기건방진가득기C-V_R관계.운용상규C-V법,유초특기결적C-V_R관계가제취출n구참잡농도.실현료대x_(n0)적정학제취,기정도체1.8 nm.기우정학적x_(n0),운용쌍변C-V법제취적p~+구적참잡농도분포여Medici방진결과비상문합.
Two-sided C-V technique was investigated for application in doping profile characterization of Si uhrashallow p~+-n junctions. Expressions were derived for the evaluation of the doping profile in the p~+ region,based on the knowledge of capacitance-voltage (C-V_R) relationship of the p~+-n diode, the doping profile in n region, and the depletion width in n region at thermal equilibrium (x_(n0)). Stepped doping profile in n region was designed for accurate determination of x_(n0), a crucial parameter for the extraction of the doping profile in the p~+ region. Medici simulations were carried out for the C-V_R relationships of the p~+-n and n-Schottky junctions with the same step-like n profile. The doping profile in n region could then be extracted from the C-V_R relationship of the Schottky diode. The x_(n0) is determined with an accuracy of 1.8 nm by a criterion developed. And the doping profile in the p~+ region can finally be extracted and shown to be in good agreement with the Medici simulation results.