CAJ | 학술논문

利用两种中频交流磁控溅射电源,溅射Al_2O_3含量为2 %的两块氧化锌铝陶瓷靶材,在不同衬底温度的条件下制备得到了ZAO薄膜.研究了不同衬底温度条件下不同靶材和溅射电源对ZAO薄膜结构、电学和光学性能的影响.结果表明,制备得到的ZAO薄膜均具有c轴择优取向生长的晶体结构,在衬底温度为240 ℃时,得到的ZAO薄膜的电阻率低至1.4×10~(-3) Ω·cm,可见光平均透过率在82 %以上.
이용량충중빈교류자공천사전원,천사Al_2O_3함량위2 %적량괴양화자려도자파재,재불동츤저온도적조건하제비득도료ZAO박막.연구료불동츤저온도조건하불동파재화천사전원대ZAO박막결구、전학화광학성능적영향.결과표명,제비득도적ZAO박막균구유c축택우취향생장적정체결구,재츤저온도위240 ℃시,득도적ZAO박막적전조솔저지1.4×10~(-3) Ω·cm,가견광평균투과솔재82 %이상.
Al-doped ZnO (ZAO) films have been prepared by two middle-frequency alternative magnetron sputtering power apparatus at various substrate temperatures with sputtering two ZAO ceramic targets in this paper. The influences of substrate temperature under different sputtering power apparatus and targets on microstructure, optical and electrical performances of ZAO films were investigated. The results show that substrate temperature is a dominant factor for microstructure and electrical performances of ZAO thin films. ZAO films have a hexagonal wurtzite structure with its preferred orientation along the c-axis perpendicular to the substrate surface. The film prepared at the substrate temperature of 240 ℃ exhibited a lowest resistivity of 1.4×10~(-3) Ω·cm and average transmittance of over 82 % in visible range.