光电子·激光
光電子·激光
광전자·격광
JOURNAL OF OPTOECTRONICS·LASER
2008年
11期
1454-1457
,共4页
宋瑞丽%张筱杰%刘帅%何毓敏%付丽梅%赵礼杰%刘鸿%侯乔菊%陈平%段羽
宋瑞麗%張篠傑%劉帥%何毓敏%付麗梅%趙禮傑%劉鴻%侯喬菊%陳平%段羽
송서려%장소걸%류수%하육민%부려매%조례걸%류홍%후교국%진평%단우
效率%亮度%磷光染料
效率%亮度%燐光染料
효솔%량도%린광염료
首先制备了结构为ITO/m-MTDATA(30 nm)/NPB(20 nm)/CBP:FIrPIC(10%,30 nm)/5,6,11,12-tetraphenylnaphthacene(rubrene)(x nm/Bphen(40 nm)/LiF(0.8 nm)/Al的器件.此器件效率降低,为提高效率,我们又制备了另一器件,其结构为ITO/m-MTDATA(30 nm)/NPB(20 nm)/rubrene(0.2 nm)/CBP:FIrPIC(10%,30 nm)/Bphen(40 nm)/LiF(0.8 nm)/Al.此器件亮度效率及色坐标均有所改善.此器件的最大亮度为14 V时,10050 cd/m2,最大效率为8V时,4.59(cd/A),7 V时,1.89(lm/w).1000 cd/m2时的效率约为4.00 cd/A(10 V时,1.25 lm/w).当亮度由1354 cd/m2变到10050cd/m2时,色坐标由(0.33,0.37)变到(0.34,0.37).
首先製備瞭結構為ITO/m-MTDATA(30 nm)/NPB(20 nm)/CBP:FIrPIC(10%,30 nm)/5,6,11,12-tetraphenylnaphthacene(rubrene)(x nm/Bphen(40 nm)/LiF(0.8 nm)/Al的器件.此器件效率降低,為提高效率,我們又製備瞭另一器件,其結構為ITO/m-MTDATA(30 nm)/NPB(20 nm)/rubrene(0.2 nm)/CBP:FIrPIC(10%,30 nm)/Bphen(40 nm)/LiF(0.8 nm)/Al.此器件亮度效率及色坐標均有所改善.此器件的最大亮度為14 V時,10050 cd/m2,最大效率為8V時,4.59(cd/A),7 V時,1.89(lm/w).1000 cd/m2時的效率約為4.00 cd/A(10 V時,1.25 lm/w).噹亮度由1354 cd/m2變到10050cd/m2時,色坐標由(0.33,0.37)變到(0.34,0.37).
수선제비료결구위ITO/m-MTDATA(30 nm)/NPB(20 nm)/CBP:FIrPIC(10%,30 nm)/5,6,11,12-tetraphenylnaphthacene(rubrene)(x nm/Bphen(40 nm)/LiF(0.8 nm)/Al적기건.차기건효솔강저,위제고효솔,아문우제비료령일기건,기결구위ITO/m-MTDATA(30 nm)/NPB(20 nm)/rubrene(0.2 nm)/CBP:FIrPIC(10%,30 nm)/Bphen(40 nm)/LiF(0.8 nm)/Al.차기건량도효솔급색좌표균유소개선.차기건적최대량도위14 V시,10050 cd/m2,최대효솔위8V시,4.59(cd/A),7 V시,1.89(lm/w).1000 cd/m2시적효솔약위4.00 cd/A(10 V시,1.25 lm/w).당량도유1354 cd/m2변도10050cd/m2시,색좌표유(0.33,0.37)변도(0.34,0.37).
