CAJ | 학술논문

本文提出一个用PVT法生长SiC晶体的坩埚的新颖设计.分析了生长腔中有无锥形档板对腔内及籽晶温度场的影响;比较了档板取不同厚度时SiC粉源升华面和籽晶表面的温度分布.得出了在腔内增设档板后晶体生长面的温度更趋均匀的结论;获取了随着档板厚度的增加,腔内的轴向温度梯度随之增加,但同时晶体生长面的温度也会降低的设计原则.根据计算结果,选取档板厚度等于2mm为优化参数.
본문제출일개용PVT법생장SiC정체적감과적신영설계.분석료생장강중유무추형당판대강내급자정온도장적영향;비교료당판취불동후도시SiC분원승화면화자정표면적온도분포.득출료재강내증설당판후정체생장면적온도경추균균적결론;획취료수착당판후도적증가,강내적축향온도제도수지증가,단동시정체생장면적온도야회강저적설계원칙.근거계산결과,선취당판후도등우2mm위우화삼수.
A novel design of crucible is firstly proposed in this paper. The effects of the cone-shaped bar in the growth chamber on the evolution of the temperature fields of the growth chamber and the seed are discussed, respectively. The influences of different thicknesses of the bar on the temperature distribution at SiC source powder and seed single crystal surfaces are also investigated systematically. The calculations suggest that the radial temperature field of the growing crystal became homogenous by setting up the coneshaped baffle in the growth cell. The axial temperature gradient is increased with the increase of the baffle thickness, but the growing temperature of SiC crystals falls down at the same time. By the simulation, we can conclude that the optimal baffle thickness is about 2mm, which is relatively favorable to improve the quality and to increase the yield of growing crystal.