半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2003年
4期
342-346
,共5页
邱伟彬%董杰%王圩%周帆
邱偉彬%董傑%王圩%週帆
구위빈%동걸%왕우%주범
选区外延%MOVPE%InGaAsP%表面尖角%Ⅴ/Ⅲ比
選區外延%MOVPE%InGaAsP%錶麵尖角%Ⅴ/Ⅲ比
선구외연%MOVPE%InGaAsP%표면첨각%Ⅴ/Ⅲ비
SAG%MOVPE%InGaAsP%edge spike%Ⅴ/Ⅲ ratio
研究了利用低压MOVPE宽条(15μm)选区外延生长InGaAsP的性质.研究了生长速率、厚度增强因子、带隙调制、组分调制随着生长条件如掩模宽度、生长压力、Ⅲ族源流量的变化规律,给出了合理的解释.同时研究了不同Ⅴ/Ⅲ比下选择性生长InGaAsP表面尖角的性质.
研究瞭利用低壓MOVPE寬條(15μm)選區外延生長InGaAsP的性質.研究瞭生長速率、厚度增彊因子、帶隙調製、組分調製隨著生長條件如掩模寬度、生長壓力、Ⅲ族源流量的變化規律,給齣瞭閤理的解釋.同時研究瞭不同Ⅴ/Ⅲ比下選擇性生長InGaAsP錶麵尖角的性質.
연구료이용저압MOVPE관조(15μm)선구외연생장InGaAsP적성질.연구료생장속솔、후도증강인자、대극조제、조분조제수착생장조건여엄모관도、생장압력、Ⅲ족원류량적변화규률,급출료합리적해석.동시연구료불동Ⅴ/Ⅲ비하선택성생장InGaAsP표면첨각적성질.
The wide stripe (15μm) selective area growth (SAG) of InGaAsP by low pressure MOVPE is systematically investigated.The characteristics of the growth ratios,thickness enhancement factors,bandgap modulation,and composition modulation vary with the growth conditions such as mask width,growth pressure.Flux of Ⅲ-group precursors are outlined and the rational mechanism behind SAG MOVPE is explained.In addition,the surface spike of the SAG InGaAsP is shown and the course of it is given by the variation of Ⅴ/Ⅲ.
