CAJ | 학술논문

给出了超薄栅MOS结构中直接隧穿弛豫谱(DTRS)技术的细节描述,同时在超薄栅氧化层(＜3nm)中给出了该技术的具体应用.通过该技术,超薄栅氧化层中明显的双峰现象被发现,这意味着在栅氧化层退化过程中存在着两种陷阱.更进一步的研究发现,直接隧穿应力下超薄栅氧化层(＜3nm)中的界面/氧化层陷阱的密度以及俘获截面小于FN 应力下厚氧化层(＞4nm)中界面/氧化层陷阱的密度和俘获截面,同时发现超薄氧化层中氧化层陷阱的矩心更靠近阳极界面.
급출료초박책MOS결구중직접수천이예보(DTRS)기술적세절묘술,동시재초박책양화층(＜3nm)중급출료해기술적구체응용.통과해기술,초박책양화층중명현적쌍봉현상피발현,저의미착재책양화층퇴화과정중존재착량충함정.경진일보적연구발현,직접수천응력하초박책양화층(＜3nm)중적계면/양화층함정적밀도이급부획절면소우FN 응력하후양화층(＞4nm)중계면/양화층함정적밀도화부획절면,동시발현초박양화층중양화층함정적구심경고근양겁계면.
A detailed description of relaxation spectroscopy technique under direct tunneling stress is given.A double peak phenomena by applied relaxation spectroscopy on ultra-thin (＜3nm) gate oxide is found.It suggests that two kinds of traps exist in the degradation of gate oxide.It is also observed that both the trap density and the generation/capture cross-section of oxide trap and interface trap are smaller in ultra-thin gate oxide (＜3nm) under DT stress than those in the thicker oxide (＞4nm) under FN stress,and the centroid of oxide trap is closer to anode interface than in the center of oxide.