CAJ | 학술논문

以磁控溅射方法于p-Si上淀积富硅二氧化硅，形成富硅二氧化硅／p-Si结构，用金刚刀在其正面刻划出方形网格后在N2气氛中退火，其光致发光(PL)谱与未刻划的经同样条件退火的对比样品的PL谱有很大不同.未刻划样品的PL谱只有一个峰，位于840nm(1.48eV)，而刻划样品的PL谱是双峰结构，峰位分别位于630nm(1.97eV)和840nm.800℃退火的刻划富硅二氧化硅/p-Si样品在背面蒸铝制成欧姆接触和正面蒸上半透明金电极后在正向偏压10V下的电致发光(EL)强度约为同样制备的未经刻划样品在同样测试条件下的EL强度的6倍.EL谱形状也有明显不同，表现在：未经刻划样品的EL谱可以分解为两个高斯峰，峰位分别位于1.83eV和2.23eV；而在刻划样品EL谱中1.83eV发光峰大幅度增强，还产生了一个新的能量为3.0eV的发光峰.认为刻划造成的高密度缺陷区为氧化硅提供了新的发光中心并对其中某些杂质起了吸除作用，导致PL和EL光谱改变.
이자공천사방법우p-Si상정적부규이양화규，형성부규이양화규／p-Si결구，용금강도재기정면각화출방형망격후재N2기분중퇴화，기광치발광(PL)보여미각화적경동양조건퇴화적대비양품적PL보유흔대불동.미각화양품적PL보지유일개봉，위우840nm(1.48eV)，이각화양품적PL보시쌍봉결구，봉위분별위우630nm(1.97eV)화840nm.800℃퇴화적각화부규이양화규/p-Si양품재배면증려제성구모접촉화정면증상반투명금전겁후재정향편압10V하적전치발광(EL)강도약위동양제비적미경각화양품재동양측시조건하적EL강도적6배.EL보형상야유명현불동，표현재：미경각화양품적EL보가이분해위량개고사봉，봉위분별위우1.83eV화2.23eV；이재각화양품EL보중1.83eV발광봉대폭도증강，환산생료일개신적능량위3.0eV적발광봉.인위각화조성적고밀도결함구위양화규제공료신적발광중심병대기중모사잡질기료흡제작용，도치PL화EL광보개변.
The Si-rich SiO2／p-Si structure has been fabricated with two-target alternative magnetron sputtering technique.After the Si-rich SiO2／p-Si sample having been scored by diamond tip on the front surface and annealed at 800℃ in N2 the photoluminescence（PL） spectrum is found quite different from that from the unscored one，which having been annealed in the same condition.The latter has only one PL band peaking at about 1.48eV，while the former is a double-band PL spectrum with peaks at both 1.48eV and 1.97eV.The electroluminescence（EL）form the Au／scored Si-rich SiO2 film／p-Si sample is about 6 times in intensity of that of the Au／unscored one.The EL spectrum of the unscored sample can be decompounded into two Gaussian luminescence bands with peaks at about 1.83eV and 2.23eV，while in that of the scored one，the intensity of the 1.83eV peak is enhanced significantly，and a new Gaussian band with peak at about 3.0eV appears.It is believed that the high defect-density region produced by the score provides the SiO2 layer with new luminescence centers and getters some impurities in it，as results in the change in EL and PL spectra.