CAJ | 학술논문

给出了低电压微波SiGe功率异质结双极型晶体管(HBT)的器件结构和测试结果.器件结构适于低压大电流状态下应用.采用了梳状发射极条的横向版图设计,其工作电压为3-4V.在C类工作状态,1GHz的工作频率下,输出功率可以达到1.65W,具有8dB的增益.3V时可以达到的最高收集极效率为67.8%.
급출료저전압미파SiGe공솔이질결쌍겁형정체관(HBT)적기건결구화측시결과.기건결구괄우저압대전류상태하응용.채용료소상발사겁조적횡향판도설계,기공작전압위3-4V.재C류공작상태,1GHz적공작빈솔하,수출공솔가이체도1.65W,구유8dB적증익.3V시가이체도적최고수집겁효솔위67.8%.
The structure and microwave characteristics of low-voltage SiGe power HBTs are given.With this structure,the device can operate in a low-voltage and high-current state.By using an interdigital emitter strip layout and the operating voltage ranging from 3 to 4V,the output power in Class C operation can reach 1.65W at 1GHz,with the gain of 8dB.The highest collector efficiency is 67.8% under 3V.