CAJ | 학술논문

研究了Ti3SiC2掺杂对MgB2的晶格参数(a)、微观结构、超导转变温度(Tc)和临界电流密度(Jc)的影响.随着Ti3SiC2掺杂量的增加,晶格参数a逐渐变小,表明了C进入晶格代替B位的发生.随着掺杂量的增加,超导转变温度Tc从37.15K降低到36.55K.利用Bean模型通过M-H磁滞回线计算了样品的Jc值.结果表明,在低场区域,未掺杂样品的Jc值高于Ti3SiC2掺杂样品的Jc值.然而随着磁场的进一步增大,适量掺杂的样品Jc值得到提高.
연구료Ti3SiC2참잡대MgB2적정격삼수(a)、미관결구、초도전변온도(Tc)화림계전류밀도(Jc)적영향.수착Ti3SiC2참잡량적증가,정격삼수a축점변소,표명료C진입정격대체B위적발생.수착참잡량적증가,초도전변온도Tc종37.15K강저도36.55K.이용Bean모형통과M-H자체회선계산료양품적Jc치.결과표명,재저장구역,미참잡양품적Jc치고우Ti3SiC2참잡양품적Jc치.연이수착자장적진일보증대,괄량참잡적양품Jc치득도제고.
The effects of Ti3SiC2 doping on lattice parameter (a),microstructure,critical temperature (Tc) and critical current density (Jc) of MgB2 superconductors were studied.Carbon substitution for boron could be confirmed by the shrinkage of the lattice parameter a with increasing of Ti3SiC2 doping level.A reduction of Tc from 37.15 K to 36.55 K with increasing of Ti3SiC2 doping was observed.The Jc values were determined by M-H hysteresis loops.Results show that in low magnetic field region,the Jc value for the undoped sample is higher than those for the doped samples.However,with the increase of the magnetic field,the Jc for the properly doped samples will be enhanced.