河南大学学报(自然科学版)
河南大學學報(自然科學版)
하남대학학보(자연과학판)
JOURNAL OF HENAN UNIVERSITY(NATURAL SCIENCE)
2004年
1期
7-13
,共7页
韩小森%赵彩霞%高勇%王术
韓小森%趙綵霞%高勇%王術
한소삼%조채하%고용%왕술
拟中性漂移扩散模型%整体存在性%唯一性%奇解
擬中性漂移擴散模型%整體存在性%唯一性%奇解
의중성표이확산모형%정체존재성%유일성%기해
Quasineutral drift diffusion model%global existence%uniqueness%singular solutions
研究了半导体中拟中性漂移扩散模型的适定性,证明了其局部解和整体解的存在唯一性,并给出了几个稳态奇性解的例子.
研究瞭半導體中擬中性漂移擴散模型的適定性,證明瞭其跼部解和整體解的存在唯一性,併給齣瞭幾箇穩態奇性解的例子.
연구료반도체중의중성표이확산모형적괄정성,증명료기국부해화정체해적존재유일성,병급출료궤개은태기성해적례자.
In this paper the local and global wellposedness of quasineutral drift diffudion model for semiconductor device is studied. Local and global existence and uniqueness of the classical solution of quasineutral drift diffusion model for semiconductors are proven by the regularization nethod and upper and lower solution techniques. Some stationary sigular solntions are also given.
