CAJ | 학술논문

运用光刻技术和原子力显微技术(AFM)研究了亚硫酸根离子对硅和二氧化硅在40%(w)氟化铵水溶液中腐蚀速率的影响.结果表明硅和二氧化硅的腐蚀速率和亚硫酸根离子浓度有关.高分辨X射线光电子能谱(XPS)分析在有/没有亚硫酸根的溶液中腐蚀后的硅和二氧化硅表面氟元素的结果表明在这两种溶液中腐蚀得到的表面化学成分是有差别的.实验结果证明亚硫酸根离子在硅和二氧化硅的湿腐蚀中不只是表现为一种除氧剂,还干预了表面腐蚀反应过程.
운용광각기술화원자력현미기술(AFM)연구료아류산근리자대규화이양화규재40%(w)불화안수용액중부식속솔적영향.결과표명규화이양화규적부식속솔화아류산근리자농도유관.고분변X사선광전자능보(XPS)분석재유/몰유아류산근적용액중부식후적규화이양화규표면불원소적결과표명재저량충용액중부식득도적표면화학성분시유차별적.실험결과증명아류산근리자재규화이양화규적습부식중불지시표현위일충제양제,환간예료표면부식반응과정.
The effects of sulfite on the etching processes of silicon and silica in 40% (w) NH-4F aqueous solution have been studied by a method based on photolithography and atomic force microscopy (AFM). It is demonstrated that the silicon and silica etching rates depend on the sulfite concentrations. The spectra of the F 1 s core level in the high resolution X-ray photoelectron spectroscopy (XPS) for surfaces treated in solutions with/without sulfite suggest the chemistry of the surfaces is different in the two cases. The experimental results indicate that sulfite not only acts as an oxygen scavenger, but also influences the surface reactions in the wetting etching of Si and SiO2.