半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2005年
4期
635-640
,共6页
王瑞敏%陈光德%LIN J Y%Jang H X
王瑞敏%陳光德%LIN J Y%Jang H X
왕서민%진광덕%LIN J Y%Jang H X
GaN%p型GaN%喇曼散射%缺陷模
GaN%p型GaN%喇曼散射%缺陷模
GaN%p형GaN%나만산사%결함모
GaN%p-type GaN%Raman scattering%defect modes
研究了MOCVD生长的GaN及掺Mg GaN薄膜从78到578K下的喇曼散射谱.在GaN和掺Mg GaN的谱中都观察到一个位于247cm-1的峰,此峰被认为是缺陷诱导的散射峰,而非电子散射和Mg的局域模.同时讨论了两个谱中E2和A1(LO)声子峰的频率和线形.在掺Mg GaN样品中观察到应力松弛现象.
研究瞭MOCVD生長的GaN及摻Mg GaN薄膜從78到578K下的喇曼散射譜.在GaN和摻Mg GaN的譜中都觀察到一箇位于247cm-1的峰,此峰被認為是缺陷誘導的散射峰,而非電子散射和Mg的跼域模.同時討論瞭兩箇譜中E2和A1(LO)聲子峰的頻率和線形.在摻Mg GaN樣品中觀察到應力鬆弛現象.
연구료MOCVD생장적GaN급참Mg GaN박막종78도578K하적나만산사보.재GaN화참Mg GaN적보중도관찰도일개위우247cm-1적봉,차봉피인위시결함유도적산사봉,이비전자산사화Mg적국역모.동시토론료량개보중E2화A1(LO)성자봉적빈솔화선형.재참Mg GaN양품중관찰도응력송이현상.
Raman spectra of undoped GaN and Mg-doped GaN films grown by metal-organic chemical-vapor deposition on sapphire are investigated between 78 and 573K. A peak at 247cm-1 is observed in both Raman spectra of GaN and Mg-doped GaN. It is suggested that the defect-induced scattering is origin of the mode. The electronic Raman scattering mechanism and Mg-related local vibrational mode are excluded. Furthermore, the differences of E2 and A1 (LO) modes in two samples are also discussed. The stress relaxation is observed in Mg-doped GaN.