CAJ | 학술논문

针对常规IGBT在应用中存在的一些不足,提出了一种五层四端结构的新型双向IGBT功率半导体器件,其核心是以平面栅型IGBT为基础,通过对新器件采取对称结构和两路输入控制的方法,从而达到对新器件双向控制的目的.文中详细分析了它的原理,首先推导该双向IGBT的理论模型及其控制策略,然后建立实验电路验证,最后对该双向IGBT的封装形式做了一定的探讨.综合分析的结果表明,该双向IGBT具备双向导通和双向阻断能力,文中提出的双重关断方案,不但能有效减小器件在关断时的拖尾电流,还能提高器件的工作频率.
침대상규IGBT재응용중존재적일사불족,제출료일충오층사단결구적신형쌍향IGBT공솔반도체기건,기핵심시이평면책형IGBT위기출,통과대신기건채취대칭결구화량로수입공제적방법,종이체도대신기건쌍향공제적목적.문중상세분석료타적원리,수선추도해쌍향IGBT적이론모형급기공제책략,연후건립실험전로험증,최후대해쌍향IGBT적봉장형식주료일정적탐토.종합분석적결과표명,해쌍향IGBT구비쌍향도통화쌍향조단능력,문중제출적쌍중관단방안,불단능유효감소기건재관단시적타미전류,환능제고기건적공작빈솔.
Due to the defects in the applications of normal IGBT, a new power semiconductor device based on five layers four ends structure of the bidirectional IGBT is put forward. Its main part is a plane gate of the IGBT, used the strategy based on symmetry structure and two ways input control of the bidirectional IGBT, and the purposes based on bidirectional control is attained. Their principles is analyzed in detail, it is first deduces the theoretic model and control strategy of the bidirectional IGBT, then establishes and proofed the experimental circuit of the bidirectional IGBT, studies the footprints of the bidirectional IGBT in the end. Theoretical analysis and experimental results demonstrate the functions base on dual turn-on and dual turn-off of the bidirectional IGBT are good, the dual turn-off plan raised, not only reduces the tails of current effectively, but also can improve operating frequency of the bidirectional IGBT.