CAJ | 학술논문

提出了一种新的基于电荷泵技术和直流电流法的改进方法,用于提取LDD n-MOSFET沟道区与漏区的界面陷阱产生.这种方法对于初始样品以及热载流子应力退化后的样品都适用.采用这种方法可以准确地确定界面陷阱在沟道区与漏区的产生,从而有利于更深入地研究LDD结构器件的退化机制.
제출료일충신적기우전하빙기술화직류전류법적개진방법,용우제취LDD n-MOSFET구도구여루구적계면함정산생.저충방법대우초시양품이급열재류자응력퇴화후적양품도괄용.채용저충방법가이준학지학정계면함정재구도구여루구적산생,종이유리우경심입지연구LDD결구기건적퇴화궤제.
A new improved technique,based on the direct-current current-voltage and charge pumping methods,is proposed for measurements of interface traps density in the channel and the drain region for LDD n-MOSFET.This technique can be applied to virgin samples and those subjected to hot carrier stress,and the latter are known to cause the interface damage in the drain region and the channel region.The generation of interface traps density in the channel region and in the drain region can be clearly distinguished by using this technique.