微电子学
微電子學
미전자학
MICROELECTRONICS
2010年
2期
243-247
,共5页
超宽带%CMOS%低噪声放大器%电流复用
超寬帶%CMOS%低譟聲放大器%電流複用
초관대%CMOS%저조성방대기%전류복용
UWB%CMOS%LNA%Current-reuse
提出了一种基于双反馈电流复用结构的新型CMOS超宽带(UWB)低噪声放大器(LNA),放大器工作在2～12 GHz 的超宽带频段,详细分析了输入输出匹配、增益和噪声系数的性能.设计采用TSMC 0.18 μm RF CMOS工艺,在1.4 V工作电压下,放大器的直流功耗约为13 mW (包括缓冲级).仿真结果表明,在2～12 GHz频带范围内,功率增益为15.6±1.4 dB,输入、输出回波损耗分别低于-10.4和-11.5 dB,噪声系数(NF)低于3 dB(最小值为1.96 dB),三阶交调点IIP3为-12 dBm,芯片版图面积约为712 μm×614 μm.
提齣瞭一種基于雙反饋電流複用結構的新型CMOS超寬帶(UWB)低譟聲放大器(LNA),放大器工作在2～12 GHz 的超寬帶頻段,詳細分析瞭輸入輸齣匹配、增益和譟聲繫數的性能.設計採用TSMC 0.18 μm RF CMOS工藝,在1.4 V工作電壓下,放大器的直流功耗約為13 mW (包括緩遲級).倣真結果錶明,在2～12 GHz頻帶範圍內,功率增益為15.6±1.4 dB,輸入、輸齣迴波損耗分彆低于-10.4和-11.5 dB,譟聲繫數(NF)低于3 dB(最小值為1.96 dB),三階交調點IIP3為-12 dBm,芯片版圖麵積約為712 μm×614 μm.
제출료일충기우쌍반궤전류복용결구적신형CMOS초관대(UWB)저조성방대기(LNA),방대기공작재2～12 GHz 적초관대빈단,상세분석료수입수출필배、증익화조성계수적성능.설계채용TSMC 0.18 μm RF CMOS공예,재1.4 V공작전압하,방대기적직류공모약위13 mW (포괄완충급).방진결과표명,재2～12 GHz빈대범위내,공솔증익위15.6±1.4 dB,수입、수출회파손모분별저우-10.4화-11.5 dB,조성계수(NF)저우3 dB(최소치위1.96 dB),삼계교조점IIP3위-12 dBm,심편판도면적약위712 μm×614 μm.
A novel ultra-wideband (UWB) low noise amplifier (LNA) was presented, based on dual feedback current-reused topology, which operates in an ultra wideband range from 2 GHz to 12 GHz. Performance of input and output matching parameters, gain and noise figure was analyzed in detail. The LNA was designed in TSMC's 0.18 μm RF CMOS process. It consumes 13 mW of DC power, including buffer stage, from a 1.4 V supply. Simulation results showed that, in the frequency band ranging from 2 GHz to 12 GHz, the LNA achieved a power gain of 15.6 ± 1.4 dB, an input/output return loss lower than -10.4 dB/-11.5 dB, respectively, an NF below 3 dB (1.96 dB in minimum), and an IIP3 of -12 dBm. The circuit occupies a chip area of about 712 μm × 614 μm.
