CAJ | 학술논문

利用溶胶凝胶法在Al2O3衬底上制备出了c轴择优取向的钼掺杂氧化锌(MZO)透明导电薄膜,研究了钼的掺杂量(0～1 at%)对钼掺杂氧化锌薄膜光电性能的影响.研究结果表明:所制备的薄膜为六方纤锌矿型结构且表面平整、致密.通过高温真空退火,MZO薄膜的电阻率明显降低.且随着钼含量的增加,MZO薄膜的电阻率呈现出先减小后增大的趋势,当钼含量为0.4at%时,获得最小电阻率为0.13 Ωcm.薄膜在近红外区域(800～2000 nm)的平均透过率大于85%,这可以有效地拓宽光电器件的光谱范围.
이용용효응효법재Al2O3츤저상제비출료c축택우취향적목참잡양화자(MZO)투명도전박막,연구료목적참잡량(0～1 at%)대목참잡양화자박막광전성능적영향.연구결과표명:소제비적박막위륙방섬자광형결구차표면평정、치밀.통과고온진공퇴화,MZO박막적전조솔명현강저.차수착목함량적증가,MZO박막적전조솔정현출선감소후증대적추세,당목함량위0.4at%시,획득최소전조솔위0.13 Ωcm.박막재근홍외구역(800～2000 nm)적평균투과솔대우85%,저가이유효지탁관광전기건적광보범위.
Mo-doped ZnO (MZO) films with different Mo concentration (0～1 at%) were prepared on Al2O3(0001) substrates by sol-gel spin coating route. It was found that the MZO films with ZnO hexagonal wurtzite structure were highly c-axis orientation. The electrical properties of MZO films can be significantly improved by the heat-treatment in vacuum. The resistivity of the films initially decreases with the increase of Mocontent and then gradually increases with a further increase of Mo content. The lowest resistivity of 0.13 Ωcm was obtained at a Mo content of 0.4 at%. The carrier concentration and Hall mobility were measured and discussed to understand the electrical transport characteristics. The high average transmittance (＞85%)in near-infrared region (800～2000 nm) indicates the possible use of MZO films in photoelectric device can widen absorption spectrum range.