发光学报
髮光學報
발광학보
CHINESE JOURNAL OF LUMINESCENCE
2010年
6期
836-841
,共6页
非线性系数%光致发光%自组装量子点
非線性繫數%光緻髮光%自組裝量子點
비선성계수%광치발광%자조장양자점
nonlinear coefficient%photoluminescence%self-assembled quantum dots
研究了在CdSe/ZnSe自组装量子点中CdSe量子点的发光随着激发光强度变化的特性.发现当激发强度(I)变化3个数量级的时候,量子点发光的峰位、峰形都没有发生明显的变化.通过公式L∝Ik(其中,是激发光强度,L是量子点发光强度,k是非线性系数)得到非线性系数k值.实验结果表明:在温度由21 K升高到300 K的过程中,k值随温度变化可以分为3个区域:当温度低于120 K时,k值接近于1;然后,随着温度升高,k值慢慢变小;最后,随温度进一步升高,k值由200 K时的0.946迅速减少到0.870.结合发光随温度变化的实验结果,确认在120 K以下发光主要来源于束缚激子复合.在温度由200 K升高到300 K的过程中,非线性系数的单调减小主要归因于随着温度的升高,发光部分来自于由自由电子或空穴到束缚态能级(FB)的复合.进一步通过分析量子点发光的积分强度随着温度的变化的实验结果,发现发光强度随温度升高而减弱的主要原因是材料中的缺陷或者位错等提供非辐射渠道.
研究瞭在CdSe/ZnSe自組裝量子點中CdSe量子點的髮光隨著激髮光彊度變化的特性.髮現噹激髮彊度(I)變化3箇數量級的時候,量子點髮光的峰位、峰形都沒有髮生明顯的變化.通過公式L∝Ik(其中,是激髮光彊度,L是量子點髮光彊度,k是非線性繫數)得到非線性繫數k值.實驗結果錶明:在溫度由21 K升高到300 K的過程中,k值隨溫度變化可以分為3箇區域:噹溫度低于120 K時,k值接近于1;然後,隨著溫度升高,k值慢慢變小;最後,隨溫度進一步升高,k值由200 K時的0.946迅速減少到0.870.結閤髮光隨溫度變化的實驗結果,確認在120 K以下髮光主要來源于束縳激子複閤.在溫度由200 K升高到300 K的過程中,非線性繫數的單調減小主要歸因于隨著溫度的升高,髮光部分來自于由自由電子或空穴到束縳態能級(FB)的複閤.進一步通過分析量子點髮光的積分彊度隨著溫度的變化的實驗結果,髮現髮光彊度隨溫度升高而減弱的主要原因是材料中的缺陷或者位錯等提供非輻射渠道.
연구료재CdSe/ZnSe자조장양자점중CdSe양자점적발광수착격발광강도변화적특성.발현당격발강도(I)변화3개수량급적시후,양자점발광적봉위、봉형도몰유발생명현적변화.통과공식L∝Ik(기중,시격발광강도,L시양자점발광강도,k시비선성계수)득도비선성계수k치.실험결과표명:재온도유21 K승고도300 K적과정중,k치수온도변화가이분위3개구역:당온도저우120 K시,k치접근우1;연후,수착온도승고,k치만만변소;최후,수온도진일보승고,k치유200 K시적0.946신속감소도0.870.결합발광수온도변화적실험결과,학인재120 K이하발광주요래원우속박격자복합.재온도유200 K승고도300 K적과정중,비선성계수적단조감소주요귀인우수착온도적승고,발광부분래자우유자유전자혹공혈도속박태능급(FB)적복합.진일보통과분석양자점발광적적분강도수착온도적변화적실험결과,발현발광강도수온도승고이감약적주요원인시재료중적결함혹자위착등제공비복사거도.
We have investigated the excitation-intensity-dependent optical properties of CdSe/ZnSe self-assembled quantum dots (QDs) at different temperature. When excitation intensity (I) is varied by three orders of magnitude,the photolumineseence (PL) morphology and peak positions appear to be independent on excitation intensity. The nonlinear coefficient k obtained by a relation of L ∝Ik in the temperature ranges of 21~300 K shows regularity which is described in three temperature regions:k is close to 1, when the temperature is below 120 K, it slightly decreases with increasing temperature in ranges of 120~200 K and it rapidly decreases from 0.946 to 0.870 with the temperature in the ranges of 200~300 K. Taking the temperature dependence of PL into account, we have confirmed that the bound excitonic recombination is a dominant recombination mechanism below 120 K. The nonlinear coefficient k monotonously decreases in the temperature ranges of 120~300 K, which is attributed to increasing transition from free-to-bound (FB) exciton with increasing temperature. Furthermore, the temperature dependence of integrated PL intensity reveals that defects and dislocations in the material provide nonradiative channels to quench the luminescence.