深圳大学学报(理工版)
深圳大學學報(理工版)
심수대학학보(리공판)
JOURNAL OF SHENZHEN UNIVERISYT SCIENCE & ENGINEERING
2010年
4期
433-439
,共7页
半导体材料%晶体生长%氮化铝%单晶体%宽禁带半导体%物理气相沉积
半導體材料%晶體生長%氮化鋁%單晶體%寬禁帶半導體%物理氣相沉積
반도체재료%정체생장%담화려%단정체%관금대반도체%물리기상침적
semiconductor materials%crystal growth%aluminum nitride%single crystals%wide-bandgap semiconductor%physical vapor deposition
评述氮化铝体单晶生长技术中常用的金属铝直接氮化法、溶解生长法、氢化物气相外延法和物理气相传输法.指出氢化物气相外延法和物理气相传输法是前景看好的生长氮化铝体单晶方法.介绍本课题组对物理气相传输法的一些改进.认为生长大尺寸氮化铝单晶体的研究将集中在精确控制生长条件、选择合适的坩埚材料、优化制备工艺和制备优质氮化铝籽晶等方面.
評述氮化鋁體單晶生長技術中常用的金屬鋁直接氮化法、溶解生長法、氫化物氣相外延法和物理氣相傳輸法.指齣氫化物氣相外延法和物理氣相傳輸法是前景看好的生長氮化鋁體單晶方法.介紹本課題組對物理氣相傳輸法的一些改進.認為生長大呎吋氮化鋁單晶體的研究將集中在精確控製生長條件、選擇閤適的坩堝材料、優化製備工藝和製備優質氮化鋁籽晶等方麵.
평술담화려체단정생장기술중상용적금속려직접담화법、용해생장법、경화물기상외연법화물리기상전수법.지출경화물기상외연법화물리기상전수법시전경간호적생장담화려체단정방법.개소본과제조대물리기상전수법적일사개진.인위생장대척촌담화려단정체적연구장집중재정학공제생장조건、선택합괄적감과재료、우화제비공예화제비우질담화려자정등방면.
The research on bulk AlN single-crystal growth was reviewed.Attention Was paid to four AlN crystal growth methods,which were direct nitridation of aluminum,solution growth,hydride vapor phase epitaxy(HVPE)growth,and physical vapor transport(PVT)growth.The technological process of each method is summarized and discussed,with a conclusion that the HVPE and PVT methods may be the most promising methods.Some improvements in the PVT growth technology made by our research team were presented.It is believed that.in order to grow large-size AlN single-crystal,further research should focus on precisely controlling the growth conditions,finding suitable inert crucible materials,finding best technical approach and process sequence,and preparing high-quality native AlN seed.