CAJ | 학술논문

以淀粉为碳源,正硅酸乙酯(TEOS)为硅源,通过溶胶-凝胶法制备了碳化硅前驱体淀粉-SiO_2凝胶,将干凝胶在氩气氛中进行碳热还原制备碳化硅(SiC).用XRD、IR、SEM、TEM及N_2低温物理吸附等手段对合成的样品进行表征.结果表明,在淀粉-SiO2凝胶中添加镍催化剂在1450℃下就能合成出尺寸大小为40～60nm多孔高比表面积的纳米SiC,其孔径主要集中在4.2和10.6nm,比表面积为127.5m~2/g,孔体积为0.43cm~3/g.
이정분위탄원,정규산을지(TEOS)위규원,통과용효-응효법제비료탄화규전구체정분-SiO_2응효,장간응효재아기분중진행탄열환원제비탄화규(SiC).용XRD、IR、SEM、TEM급N_2저온물리흡부등수단대합성적양품진행표정.결과표명,재정분-SiO2응효중첨가얼최화제재1450℃하취능합성출척촌대소위40～60nm다공고비표면적적납미SiC,기공경주요집중재4.2화10.6nm,비표면적위127.5m~2/g,공체적위0.43cm~3/g.
The precursor of silicon carbide (SiC) was obtained by sol-gel methods in which used tetraethoxysilane as silicon source and starch as carbon source, and then the oxalic acid and nickel nitrate were added respectively as catalyst for hydrolysis and polymeration reactions. The obtained precursor was used to prepare SiC by carbothermal reduction in the Ar flow. The samples were characterized by X-ray diffraction, Fourier transform infrared (FTIR) spectroscopy, scanning electron microscope, transmission electron microscope, and low-temperature nitrogen adsorption-desorption measurement. The results showed that the carbothermal temperature for synthesizing SiC needed to be at 1450℃ when the nickel nitrate was employed in the precursor. At this temperature, the obtained sample is composed of agglomerated regular grains with size ranging from 40-60nm and has a high specific surface area of 127. 5m~2/g and the main pore diametre size center at 4. 2 and 10. 6nm.