CAJ | 학술논문

采用倾斜式生长的方法,在本底真空为3×10~(-4) Pa,生长率为0.2 nm·s~(-1)的条件下,通过改变衬底的法线方向与入射粒子流的夹角α,在ITO导电玻璃衬底上制备了ZnS纳米薄膜.在α=80°和85°时,样品的X射线衍射谱证实了不同倾斜角时所制备薄膜中均有纳米ZnS晶体形成,扫描电子显微镜(SEM)图像显示,所形成的薄膜均呈现出了柱状结构,并且倾斜角为85°时所得到的纳米柱直径大于80°时所得结果;在α=0°时,相应测量结果表明,虽然在不同衬底七也形成了纳米ZnS晶体薄膜,但并未见柱状结构,而是形成了一层均匀且致密的薄膜.对两种薄膜结构的生长动力学过程作了分析.ITO衬底上薄膜的透射光谱表明ZnS柱状薄膜能够提高可见光的透过率,因此对柱状ZnS纳米薄膜的研究将有利于提高电致发光器件的发光效率.
채용경사식생장적방법,재본저진공위3×10~(-4) Pa,생장솔위0.2 nm·s~(-1)적조건하,통과개변츤저적법선방향여입사입자류적협각α,재ITO도전파리츤저상제비료ZnS납미박막.재α=80°화85°시,양품적X사선연사보증실료불동경사각시소제비박막중균유납미ZnS정체형성,소묘전자현미경(SEM)도상현시,소형성적박막균정현출료주상결구,병차경사각위85°시소득도적납미주직경대우80°시소득결과;재α=0°시,상응측량결과표명,수연재불동츤저칠야형성료납미ZnS정체박막,단병미견주상결구,이시형성료일층균균차치밀적박막.대량충박막결구적생장동역학과정작료분석.ITO츤저상박막적투사광보표명ZnS주상박막능구제고가견광적투과솔,인차대주상ZnS납미박막적연구장유리우제고전치발광기건적발광효솔.
Nanocrystalline ZnS thin films were fabricated by glancing angle deposition(GLAD)technology in an electron beam evaporation system.Deposition was carried out in the custom vacuum chamber at a base pressure 3×10~(-4) Pa,and the deposition rate was fixed at 0.2 nm·s~(-1).ZnS films were deposited on pieces of indium tin oxide(ITO)substrates when the oblique angle of the substrate relative to the incoming molecular flux was set to 0°,80° and 85° off the substrate normal respectively.X-ray diffraction(XRD)spectra and scanning electron microscope(SEM)images showed that ZnS nanocrystalline films were formed on the substrates at different oblique angle,but the nanocolunm structure was only formed under the situation of α=80° and 85°.The dynamics during the deposition process of the ZnS films at α=0°,80° and 85° was analyzed.The transmitted spectra of ZnS thin films deposited on ITO substrates showed that the ZnS nanoeolumn thin films could enhance the tranamissivity in visible range.The ZnS nanocolumn could be used into electrolurninescence device,and it would enhance the luminous efficiency of the device.