CAJ | 학술논문

提出了用一种无机半导体的模型来计算有机电致发光器件(OELDs)的J-V特性.通过在金属/有机物界面插入薄LiF层,由此引入的偶极子能极大地降低了电子的注入势垒和OELDs的开启电压.从而,载流子的注入得到了平衡,OELDs的性能得到了较大提高.经过数值计算,发现LiF插入层有一个约为1.5～5.0 nm的最优厚度.LiF层太厚或太薄都会提高器件的开启电压、降低器件的性能.结果表明:这一模型可以用来解释OELD通过LiF修饰阴极后性能的提高.
제출료용일충무궤반도체적모형래계산유궤전치발광기건(OELDs)적J-V특성.통과재금속/유궤물계면삽입박LiF층,유차인입적우겁자능겁대지강저료전자적주입세루화OELDs적개계전압.종이,재류자적주입득도료평형,OELDs적성능득도료교대제고.경과수치계산,발현LiF삽입층유일개약위1.5～5.0 nm적최우후도.LiF층태후혹태박도회제고기건적개계전압、강저기건적성능.결과표명:저일모형가이용래해석OELD통과LiF수식음겁후성능적제고.
A model for inorganic semiconductor has been presented to calculate the J-V characteristics of organic electroluminescent devices (OELDs). The additional dipole energy introduced by inserting a thin LiF layer at metal/organic interface significantly decreases the potential barrier for electrons injection and the turn-on voltage of OELD. The charge carriers injection has been balanced, and then the performance of OELD has been greatly enhanced. By detailed numerical calculation, it has been found that the optimal thickness of inserted LiF should be in the range of 1.5～5.0 nm, too thick or too thin LiF will increase the turn-on voltage of OELD and degrade its performance. It has been proved that this model is proper to explain the performance enhancement of OELDs via modification of electrode with LiF.