CAJ | 학술논문

采用原位粉末装管技术(in-situ PIT)制备了萘(C10H8)掺杂MgB2/Nb/Cu线材.前驱粉末按照MgB2+xwt％ (x=0,2,5,8)的比例将Mg粉、B粉和C10H8粉末混合研磨,装入Cu/Nb复合管中,分别拉拔加工至φ2.0 mm和φ1.0 mun,然后Ar气氛中分别在650,700,750℃热处理,保温2.5 h.通过X射线衍射仪(XRD)、扫描电子显微镜(SEM)和能谱仪(EDS)等测试手段分析了样品的相结构和微观结构等.结果发现,样品超导转变温度Tc不随萘掺杂量的变化而变化,但正常态电阻有所降低.在20和25K无外磁场时,x=8样品的临界电流密度分别达到1.1×105和3.8× 104 A/cm2,而x=5样品也达到3.1×104和1.2× 104 A/cm2.
채용원위분말장관기술(in-situ PIT)제비료내(C10H8)참잡MgB2/Nb/Cu선재.전구분말안조MgB2+xwt％ (x=0,2,5,8)적비례장Mg분、B분화C10H8분말혼합연마,장입Cu/Nb복합관중,분별랍발가공지φ2.0 mm화φ1.0 mun,연후Ar기분중분별재650,700,750℃열처리,보온2.5 h.통과X사선연사의(XRD)、소묘전자현미경(SEM)화능보의(EDS)등측시수단분석료양품적상결구화미관결구등.결과발현,양품초도전변온도Tc불수내참잡량적변화이변화,단정상태전조유소강저.재20화25K무외자장시,x=8양품적림계전류밀도분별체도1.1×105화3.8× 104 A/cm2,이x=5양품야체도3.1×104화1.2× 104 A/cm2.
C10H8-doped MgB2 wires were fabricated by in-situ PIT (Powder in Tube) method.The Nb/Cu rube was filled with the uniformly mixed precursor powders of magnesium,boron and C10H8 with the stoichiometry of MgB2+xwt％C10H8,where x=0,2,5,8and drawn to diameter φ2 mm and φ1 mam,respectively,and then heat treated in argon atmosphere at three different temperatures (650,700,750 ℃) for 2.5 h.The phase formation and microstructures of the samples were analyzed by X-ray diffraction (XRD),scanning electron microscopy (SEM),and so on.It is found that the critical transition temperature (Tc) changes little with increasing of C10H8 doping content,while normal resistance decreases to some degree.At 20,25 K and in zero external field,the critical current density (Jc) the sample of x=8 achieves 1.1 × 105 and 3.8× 104 A/cm2,respectively,and the Jc of the sample of x=5 reaches 3.1 × 104and 1.2× 104 A/cm2,respectively.