哈尔滨工程大学学报
哈爾濱工程大學學報
합이빈공정대학학보
JOURNAL OF HARBIN ENGINEERING UNIVERSITY
2013年
7期
929-932
,共4页
NiTi合金%薄膜%基底%形貌
NiTi閤金%薄膜%基底%形貌
NiTi합금%박막%기저%형모
NiTi alloys%thin film%substrate%morphology
针对制备NiTi合金薄膜中原子个数比难于控制的问题,探讨了一种工艺方法制备薄膜.该工艺运用射频磁控溅射法,采用倾斜的固定的纯Ni和纯Ti的单质靶材同时溅射,同时基底自转的方法,以保证整个薄膜在制备过程中Ni原子、Ti原子在基底上均匀分布,并可以很好的控制各原子的溅射功率.研究不同基底温度和不同溅射功率下制备出的薄膜成分及表面形貌的变化.得到了基底温度和溅射功率比值对成分及薄膜成岛方式的影响规律.实验表明:随着基底温度的升高,薄膜中岛的尺寸增加,数量减少;Ti靶与Ni靶材功率比值为3.7时,制备出的薄膜最接近等原子比.
針對製備NiTi閤金薄膜中原子箇數比難于控製的問題,探討瞭一種工藝方法製備薄膜.該工藝運用射頻磁控濺射法,採用傾斜的固定的純Ni和純Ti的單質靶材同時濺射,同時基底自轉的方法,以保證整箇薄膜在製備過程中Ni原子、Ti原子在基底上均勻分佈,併可以很好的控製各原子的濺射功率.研究不同基底溫度和不同濺射功率下製備齣的薄膜成分及錶麵形貌的變化.得到瞭基底溫度和濺射功率比值對成分及薄膜成島方式的影響規律.實驗錶明:隨著基底溫度的升高,薄膜中島的呎吋增加,數量減少;Ti靶與Ni靶材功率比值為3.7時,製備齣的薄膜最接近等原子比.
침대제비NiTi합금박막중원자개수비난우공제적문제,탐토료일충공예방법제비박막.해공예운용사빈자공천사법,채용경사적고정적순Ni화순Ti적단질파재동시천사,동시기저자전적방법,이보증정개박막재제비과정중Ni원자、Ti원자재기저상균균분포,병가이흔호적공제각원자적천사공솔.연구불동기저온도화불동천사공솔하제비출적박막성분급표면형모적변화.득도료기저온도화천사공솔비치대성분급박막성도방식적영향규률.실험표명:수착기저온도적승고,박막중도적척촌증가,수량감소;Ti파여Ni파재공솔비치위3.7시,제비출적박막최접근등원자비.
Radio frequency (RF) magnetron sputtering has been adopted as a new method for conducing research, aiming at solving the problem of how to control the number of Ni and Ti atoms during the preparation of NiTi alloy thin film. In this new preparation technology, we have chosen the pure Ni and Ti as the target materials, which are tilted and fixed and sputter simultaneously, at the same time the substrate rotates on its axis, This new technique can ensure the Ni and Ti atoms distributed evenly and control the ratio of the two atoms easily. The main objective of this paper is to investigate the rule of film atomic composition and surface morphology with different temperatures of the substrate and different sputtering powers at the initial stage of the film growth. The rule of substrate tempera?ture and sputtering power ratio influencing composition and island forming pattern of the film was obtained. The ex?periments show that as the substrate temperature increases, the size of the island increases and the amount decrea?ses. The two types of atoms can be near equal when the sputtering power ratio of Ni and Ti targets is 3.7.