CAJ | 학술논문

设计了980 nm非对称宽波导InGaAs/InGaAsP量子阱激光器，并在结构中插入电流阻挡层，有效地阻止载流子的泄露。用LASTIP软件对980 nm非对称宽波导量子阱激光器进行理论模拟，与传统的980 nm对称宽波导量子阱激光器相比，非对称宽波导量子阱激光器波导和量子阱之间有更小的能带差，非对称宽波导结构具有更低的阈值电流，更高的斜效率以及更低的阻抗，所以带有电流阻挡层的980 nm非对称宽波导InGaAs/InGaAsP量子阱激光器有更高的光电转换效率和输出功率。
설계료980 nm비대칭관파도InGaAs/InGaAsP양자정격광기，병재결구중삽입전류조당층，유효지조지재류자적설로。용LASTIP연건대980 nm비대칭관파도양자정격광기진행이론모의，여전통적980 nm대칭관파도양자정격광기상비，비대칭관파도양자정격광기파도화양자정지간유경소적능대차，비대칭관파도결구구유경저적역치전류，경고적사효솔이급경저적조항，소이대유전류조당층적980 nm비대칭관파도InGaAs/InGaAsP양자정격광기유경고적광전전환효솔화수출공솔。
The design of asymmetric 980 nm InGaAs/InGaAsP broad-waveguide diode lasers with current blocking layer was designed for high-power, which prevents carrier leakage and increases electro-optical conversion efficiency. The properties of the 980 nm asymmetric waveguide quantum well structure lasers were numerically studied with a commercial LASTIP simulation program. Compared to symmetric structure, the lasers with asymmetric waveguide have a smaller band offset between waveguide and QW. The simulation results show that the asymmetric waveguide has a lower threshold current and higher slope efficiency, lower series resistance than symmetric waveguide the structure, so laser performance of asymmetric 980 nm InGaAs/InGaAsP broad-waveguide diode lasers with current blocking layer has higher electro-optical conversion efficiency and laser output power.