湖北大学学报(自然科学版)
湖北大學學報(自然科學版)
호북대학학보(자연과학판)
2013年
2期
176-179
,共4页
孙晓剑%樊明雷%张小山%曾静%余萍
孫曉劍%樊明雷%張小山%曾靜%餘萍
손효검%번명뢰%장소산%증정%여평
Ba0. 3Sr0. 7Zr0. 18Ti0. 82O3陶瓷%MgO掺杂%Mg2+掺杂%介电性能
Ba0. 3Sr0. 7Zr0. 18Ti0. 82O3陶瓷%MgO摻雜%Mg2+摻雜%介電性能
Ba0. 3Sr0. 7Zr0. 18Ti0. 82O3도자%MgO참잡%Mg2+참잡%개전성능
Ba0 .3 Sr0 .7 Zr0 .18 Ti0 .82 O3 ceramics%MgO dopant%Mg 2+ dopant%dielectric property
采用溶胶-凝胶法制备Ba0.3 Sr0.7 Zr0.18 Ti0.82 O3陶瓷粉末,以传统陶瓷制备工艺制备Mg元素掺杂的Ba0.3 Sr0.7 Zr0.18 Ti0.82 O3陶瓷.研究MgO掺杂量为1.6%(质量分数)时,MgO固相掺杂和Mg2+湿化学法掺杂两种不同的掺杂方式对Mg掺杂的Ba0.3 Sr0.7 Zr0.18 Ti0.82 O3陶瓷显微结构及电学性能的影响.研究结果表明,当Mg掺杂量相同时,掺杂方式对Mg掺杂的Ba0.3 Sr0.7 Zr0.18 Ti0.82 O3陶瓷的显微结构和电学特性有显著的影响,相比纯的Ba0.3 Sr0.7 Zr0.18 Ti0.82 O3陶瓷,两种掺杂方式中,Mg2+湿化学法掺杂相对于MgO固相掺杂,在BSZT陶瓷中的分布更均匀,替位程度更高,所以其对介电常数的影响也相对更大.而MgO固相掺杂相对于Mg2+湿化学法掺杂明显地促进了陶瓷晶粒的生长,提高了陶瓷的致密性,同时其击穿电场和电阻率也有较大提高.1350℃下烧结的固相MgO掺杂的Ba0.3 Sr0.7 Zr0.18 Ti0.82 O3陶瓷性能较优,介电常数约为590,介电损耗低于0.0005,电阻率为7.78×1013Ω?mm ,击穿场强为6.56 kV/mm .
採用溶膠-凝膠法製備Ba0.3 Sr0.7 Zr0.18 Ti0.82 O3陶瓷粉末,以傳統陶瓷製備工藝製備Mg元素摻雜的Ba0.3 Sr0.7 Zr0.18 Ti0.82 O3陶瓷.研究MgO摻雜量為1.6%(質量分數)時,MgO固相摻雜和Mg2+濕化學法摻雜兩種不同的摻雜方式對Mg摻雜的Ba0.3 Sr0.7 Zr0.18 Ti0.82 O3陶瓷顯微結構及電學性能的影響.研究結果錶明,噹Mg摻雜量相同時,摻雜方式對Mg摻雜的Ba0.3 Sr0.7 Zr0.18 Ti0.82 O3陶瓷的顯微結構和電學特性有顯著的影響,相比純的Ba0.3 Sr0.7 Zr0.18 Ti0.82 O3陶瓷,兩種摻雜方式中,Mg2+濕化學法摻雜相對于MgO固相摻雜,在BSZT陶瓷中的分佈更均勻,替位程度更高,所以其對介電常數的影響也相對更大.而MgO固相摻雜相對于Mg2+濕化學法摻雜明顯地促進瞭陶瓷晶粒的生長,提高瞭陶瓷的緻密性,同時其擊穿電場和電阻率也有較大提高.1350℃下燒結的固相MgO摻雜的Ba0.3 Sr0.7 Zr0.18 Ti0.82 O3陶瓷性能較優,介電常數約為590,介電損耗低于0.0005,電阻率為7.78×1013Ω?mm ,擊穿場彊為6.56 kV/mm .
채용용효-응효법제비Ba0.3 Sr0.7 Zr0.18 Ti0.82 O3도자분말,이전통도자제비공예제비Mg원소참잡적Ba0.3 Sr0.7 Zr0.18 Ti0.82 O3도자.연구MgO참잡량위1.6%(질량분수)시,MgO고상참잡화Mg2+습화학법참잡량충불동적참잡방식대Mg참잡적Ba0.3 Sr0.7 Zr0.18 Ti0.82 O3도자현미결구급전학성능적영향.연구결과표명,당Mg참잡량상동시,참잡방식대Mg참잡적Ba0.3 Sr0.7 Zr0.18 Ti0.82 O3도자적현미결구화전학특성유현저적영향,상비순적Ba0.3 Sr0.7 Zr0.18 Ti0.82 O3도자,량충참잡방식중,Mg2+습화학법참잡상대우MgO고상참잡,재BSZT도자중적분포경균균,체위정도경고,소이기대개전상수적영향야상대경대.이MgO고상참잡상대우Mg2+습화학법참잡명현지촉진료도자정립적생장,제고료도자적치밀성,동시기격천전장화전조솔야유교대제고.1350℃하소결적고상MgO참잡적Ba0.3 Sr0.7 Zr0.18 Ti0.82 O3도자성능교우,개전상수약위590,개전손모저우0.0005,전조솔위7.78×1013Ω?mm ,격천장강위6.56 kV/mm .
Ba0 .3 Sr0 .7 Zr0 .18 Ti0 .82 O3 (BSZT ) powder was synthesized by sol-gel processing and Mg :Ba0 .3 Sr0 .7 Zr0 .18 Ti0 .82 O3 ceramics with 1 .6% (wt .) MgO doped were prepared by ceramic fabrication traditional technology .The effects of doping method on the characteristics of the microstructure and electric properties of Mg :Ba0 .3 Sr0 .7 Zr0 .18 Ti0 .82 O3 ceramics were investigated experimentally .The Mg element was introduced into the powder by mixing with solid state MgO and by sol-gel processing with Mg2+ , respectively . The results revealed that doping method played an important role in the microstructure and electric properties of Mg :Ba0 .3 Sr0 .7 Zr0 .18 Ti0 .82 O3 ceramics .Compared with pure Ba0 .3 Sr0 .7 Zr0 .18 Ti0 .82 O3 ceramics ,Mg2+ aid distributed more evenly and substituted highlier in the BSZT ceramics than MgO aid ,so it had a great impact on the dielectric constant of ceramics .Moreover , compared to Mg 2+ aid , MgO aid was beneficial to improve the density of the ceramics and the resistivity and breakdown strength were also enhanced . The Mg :Ba0 .3 Sr0 .7 Zr0 .18 Ti0 .82 O3 ceramics doped MgO ,sintered at 1 350 ℃ ,possessed the best electric properties :ε≈590 at 110 M Hz ,tanδ≈0 .000 5 ,ρ≈7 .78 × 1013 Ω?mm ,E≈6 .56 kV/mm .