湖北大学学报（自然科学版）
湖北大學學報（自然科學版）
호북대학학보（자연과학판）
2013年
2期
168-172
,共5页
AMPS-1D%pin光伏电池%V-Ga共掺TiO2%光伏特性
AMPS-1D%pin光伏電池%V-Ga共摻TiO2%光伏特性
AMPS-1D%pin광복전지%V-Ga공참TiO2%광복특성
AM PS-1D%pin photovoltaic cell%V-Ga co-doped TiO2%photovoltaic characteristics
基于实验上获得的带隙宽度为1．6 eV的 V-Ga共掺杂 TiO2材料，设计了一种新型pin结构光伏电池．通过Nb：TiO2作为n型重掺杂层，Cu2 O或CuO作为p型掺杂层，建立pn结自建电场．中间层V-Ga：TiO2为主要光吸收层，运用AMPS-1D软件模拟器件性能，研究Cu2 O或CuO材料作为p型层对光伏性能的影响．模拟结果显示，Cu2 O在这种结构中适合作为p型层，优化后器件光伏转化效率可达到34％．此外，通过对材料中带尾缺陷密度、吸收层与p型层界面对器件性能影响的研究，为器件制备中可能存在的问题提供解决思路．
基于實驗上穫得的帶隙寬度為1．6 eV的 V-Ga共摻雜 TiO2材料，設計瞭一種新型pin結構光伏電池．通過Nb：TiO2作為n型重摻雜層，Cu2 O或CuO作為p型摻雜層，建立pn結自建電場．中間層V-Ga：TiO2為主要光吸收層，運用AMPS-1D軟件模擬器件性能，研究Cu2 O或CuO材料作為p型層對光伏性能的影響．模擬結果顯示，Cu2 O在這種結構中適閤作為p型層，優化後器件光伏轉化效率可達到34％．此外，通過對材料中帶尾缺陷密度、吸收層與p型層界麵對器件性能影響的研究，為器件製備中可能存在的問題提供解決思路．
기우실험상획득적대극관도위1．6 eV적 V-Ga공참잡 TiO2재료，설계료일충신형pin결구광복전지．통과Nb：TiO2작위n형중참잡층，Cu2 O혹CuO작위p형참잡층，건립pn결자건전장．중간층V-Ga：TiO2위주요광흡수층，운용AMPS-1D연건모의기건성능，연구Cu2 O혹CuO재료작위p형층대광복성능적영향．모의결과현시，Cu2 O재저충결구중괄합작위p형층，우화후기건광복전화효솔가체도34％．차외，통과대재료중대미결함밀도、흡수층여p형층계면대기건성능영향적연구，위기건제비중가능존재적문제제공해결사로．
A novel photovoltaic (PV) cell with the pin structure was designed based on the V-Ga co-doped TiO2 (V-Ga :TiO2 ) from which a bandgap of 1 .6 eV had been experimentally obtained .With a heavily doped Nb :TiO2 layer being applied as the n-type layer and a Cu2 O or CuO being used as the p-type layer ,the built-in electric field between the pn junction was created .V-Ga:TiO2 was located in the middle and acted as the main light-absorbing layer .The performance of this device was simulated by the AM PS-1D software .The simulation result showed that Cu2 O was a suitable p-type layer in the structure ,and that the optimized photovoltaic conversion efficiency could be as high as 34% . Furthermore ,the influence of the band tail density and the interfacial structure between the absorbing layer and the p-type layer on the performance of the PV device had been investigated ,which could provide the solutions for the problems encountered in the device fabrication progress .
