湖北大学学报（自然科学版）
湖北大學學報（自然科學版）
호북대학학보（자연과학판）
2013年
2期
160-163,167
,共5页
赵国华%高云%鲍钰文
趙國華%高雲%鮑鈺文
조국화%고운%포옥문
带隙基准%CMOS%指数曲率补偿
帶隙基準%CMOS%指數麯率補償
대극기준%CMOS%지수곡솔보상
bandgap reference%CMOS%exponential curvature compensation
给出一款带曲率补偿的CMOS带隙基准源电路，该电路利用双极性晶体管电流增益β与温度的指数关系对带隙基准曲率进行补偿，以简单的电路结构获得低的温度系数．电路采用CSMC 0．5μm 2P3M mixed signal CMOS工艺设计，Cadence Spectre仿真结果显示，在3．6 V的电源电压、-40～85℃范围内，基准源的温度系数为5．0×10-6/℃．
給齣一款帶麯率補償的CMOS帶隙基準源電路，該電路利用雙極性晶體管電流增益β與溫度的指數關繫對帶隙基準麯率進行補償，以簡單的電路結構穫得低的溫度繫數．電路採用CSMC 0．5μm 2P3M mixed signal CMOS工藝設計，Cadence Spectre倣真結果顯示，在3．6 V的電源電壓、-40～85℃範圍內，基準源的溫度繫數為5．0×10-6/℃．
급출일관대곡솔보상적CMOS대극기준원전로，해전로이용쌍겁성정체관전류증익β여온도적지수관계대대극기준곡솔진행보상，이간단적전로결구획득저적온도계수．전로채용CSMC 0．5μm 2P3M mixed signal CMOS공예설계，Cadence Spectre방진결과현시，재3．6 V적전원전압、-40～85℃범위내，기준원적온도계수위5．0×10-6/℃．
A curvature-compensated CMOS bandgap voltage reference (BVR) which exploited the temperature characteristics of the current gain β of a bipolar transistor was described , and low temperature coefficient of the BVR was achieved by using simple circuit form .The proposed circuit was designed for CSMC 0 .5 μm 2P3M mixed signal CMOS process . Cadence Spectre-based simulations demonstrate that the average temperature coefficient of the BVR was 5 .0 × 10 temperature range of -40 to 85 ℃ using a 3 .6 V supply voltage .-6/℃ over a.
