中国有色金属学报(英文版)
中國有色金屬學報(英文版)
중국유색금속학보(영문판)
TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA
2013年
7期
2100-2106
,共7页
何子博%李贺军%史小红%付前刚%吴恒
何子博%李賀軍%史小紅%付前剛%吳恆
하자박%리하군%사소홍%부전강%오항
MoSi2-SiC涂层%沉积温度%MTS原始分压%氧化性能
MoSi2-SiC塗層%沉積溫度%MTS原始分壓%氧化性能
MoSi2-SiC도층%침적온도%MTS원시분압%양화성능
MoSi2-SiC coating%deposition temperature%initial partial pressure of MTS%oxidation resistance
采用化学气相浸渗/反应法(CVI/CVR)在C/C复合材料表面制备MoSi2?SiC防氧化涂层。首先,制备多孔金属Mo层,然后以甲基三氯硅烷(MTS)为前驱体,利用CVI/CVR技术制备MoSi2?SiC复合涂层。采用XRD、SEM技术研究MoSi2?SiC复合涂层的制备机理,并考察涂层样品的抗氧化性能。结果表明,MTS分解的SiC填充了多孔金属Mo层中的孔隙,并与金属Mo发生反应,制备出致密的MoSi2?SiC复合涂层;在优化工艺条件下所得到的涂层样品在1500°C 空气中氧化80 h后质量损失仅为1.25%。
採用化學氣相浸滲/反應法(CVI/CVR)在C/C複閤材料錶麵製備MoSi2?SiC防氧化塗層。首先,製備多孔金屬Mo層,然後以甲基三氯硅烷(MTS)為前驅體,利用CVI/CVR技術製備MoSi2?SiC複閤塗層。採用XRD、SEM技術研究MoSi2?SiC複閤塗層的製備機理,併攷察塗層樣品的抗氧化性能。結果錶明,MTS分解的SiC填充瞭多孔金屬Mo層中的孔隙,併與金屬Mo髮生反應,製備齣緻密的MoSi2?SiC複閤塗層;在優化工藝條件下所得到的塗層樣品在1500°C 空氣中氧化80 h後質量損失僅為1.25%。
채용화학기상침삼/반응법(CVI/CVR)재C/C복합재료표면제비MoSi2?SiC방양화도층。수선,제비다공금속Mo층,연후이갑기삼록규완(MTS)위전구체,이용CVI/CVR기술제비MoSi2?SiC복합도층。채용XRD、SEM기술연구MoSi2?SiC복합도층적제비궤리,병고찰도층양품적항양화성능。결과표명,MTS분해적SiC전충료다공금속Mo층중적공극,병여금속Mo발생반응,제비출치밀적MoSi2?SiC복합도층;재우화공예조건하소득도적도층양품재1500°C 공기중양화80 h후질량손실부위1.25%。
In order to protect C/C composites from oxidation, SiC?MoSi2 composite coating was synthesized by chemical vapor infiltration/reaction (CVI/CVR) technology. A porous Mo layer was prefabricated on SiC coated C/C composites, and then MoSi2 and SiC were subsequently prepared in a CVI /CVR process using methyltrichlorosilane (MTS) as precursor. The deposition and reaction mechanism of the MoSi2?SiC composite coating was investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The oxidation behavior of SiC?MoSi2 coated specimens was tested. The results show that the porous Mo layer can be densified with SiC phase decomposed from MTS, and transformed into SiC?MoSi2 by reacting with MTS as well. A dense composite coating was prepared with optimized deposition parameters. The coated specimen exhibits a good oxidation resistance with a little mass loss of 1.25%after oxidation at 1500 °C for 80 h.