印染助剂
印染助劑
인염조제
TEXTILE AUXILIARIES
2013年
8期
17-19
,共3页
李慧芳%杨效益%张广良%朱国平%邵瑾
李慧芳%楊效益%張廣良%硃國平%邵瑾
리혜방%양효익%장엄량%주국평%소근
合成%α-萘磺酸%正交试验
閤成%α-萘磺痠%正交試驗
합성%α-내광산%정교시험
synthesis%α-naphthalene sulfonic acid%orthogonal experiment
以萘和SO3为原料,利用试验室降膜式磺化装置,通过气相-SO3磺化工艺,合成高纯度α-萘磺酸.考察了n(SO3)∶n(萘)、气相SO3的体积分数、反应温度对α-萘磺酸含量的影响.结果表明α-萘磺酸最佳合成工艺条件为:n(SO3)∶n(萘)=1.03∶1,SO3的体积分数为3%,反应温度为95℃,在该条件下萘的转化率可达97.6%.
以萘和SO3為原料,利用試驗室降膜式磺化裝置,通過氣相-SO3磺化工藝,閤成高純度α-萘磺痠.攷察瞭n(SO3)∶n(萘)、氣相SO3的體積分數、反應溫度對α-萘磺痠含量的影響.結果錶明α-萘磺痠最佳閤成工藝條件為:n(SO3)∶n(萘)=1.03∶1,SO3的體積分數為3%,反應溫度為95℃,在該條件下萘的轉化率可達97.6%.
이내화SO3위원료,이용시험실강막식광화장치,통과기상-SO3광화공예,합성고순도α-내광산.고찰료n(SO3)∶n(내)、기상SO3적체적분수、반응온도대α-내광산함량적영향.결과표명α-내광산최가합성공예조건위:n(SO3)∶n(내)=1.03∶1,SO3적체적분수위3%,반응온도위95℃,재해조건하내적전화솔가체97.6%.
Highly pure α-naphthalene sulfonic acid was synthesized through sulfonated technology with naphthalene and gas of SO3 as raw materials by laboratory fal ing film type sulfonated device. The influences of n(SO3)∶n(naphthalene), gas volume fraction of SO3 and reaction temperature on content of α-naphthalene sulfonic acid were investigated.The results showed that the optimum synthesis conditions were as fol ows:n(SO3)∶n(naphthalene)=1.03∶1, the gas volume fraction concentration was 3%, and the reaction temperature was 95℃. The sulfonated conversion rate ofα-naphthalene was 97.6%under the synthesis conditions.