中国电机工程学报
中國電機工程學報
중국전궤공정학보
ZHONGGUO DIANJI GONGCHENG XUEBAO
2013年
25期
187-195
,共9页
罗杨%吴广宁%刘继午%曹开江%彭佳%张依强%朱光亚
囉楊%吳廣寧%劉繼午%曹開江%彭佳%張依彊%硃光亞
라양%오엄저%류계오%조개강%팽가%장의강%주광아
双极性方波脉冲电压%表面放电%PI薄膜%降解%微观形貌%分子结构
雙極性方波脈遲電壓%錶麵放電%PI薄膜%降解%微觀形貌%分子結構
쌍겁성방파맥충전압%표면방전%PI박막%강해%미관형모%분자결구
bipolar continuous square impulse voltage (BCSIV)%surface discharge%polyimide (PI) film%degradation%micro-morphology%molecular structure
聚酰亚胺(polyimide,PI)薄膜作为特殊工程塑料在变频电机绝缘设计中得到了广泛应用,方波脉冲电压下的局部放电是造成变频电机绝缘系统失效的主要原因之一。为探讨放电对电机绝缘的损伤作用过程,基于ASTM 227501标准设计一套表面放电老化试验系统,并对PI薄膜进行老化试验。表面放电使介质表面碳化,增加了PI薄膜的表面电导率,这对表面放电活性有较大的影响;借助扫描电子显微镜聚酰亚胺(polyimide,PI)薄膜作为特殊工程塑料在变频电机绝缘设计中得到了广泛应用,方波脉冲电压下的局部放电是造成变频电机绝缘系统失效的主要原因之一。为探讨放电对电机绝缘的损伤作用过程,基于ASTM 227501标准设计一套表面放电老化试验系统,并对PI薄膜进行老化试验。表面放电使介质表面碳化,增加了PI薄膜的表面电导率,这对表面放电活性有较大的影响;借助扫描电子显微镜观察了不同放电老化阶段下PI薄膜表面及横截面的微观形貌,发现PI薄膜的降解是从试样表面逐渐向内部发展的过程;采用傅里叶红外光谱(Fourier transform infrared spectroscopy,FTIR)分析了PI薄膜在老化前后的FTIR图谱,发现 PI 分子主链上的醚键(C-O-C)和酰亚胺环(C-N-C)键在放电老化作用下断裂,表面放电侵蚀造成有机分子链断裂是聚合物降解的本质原因。
聚酰亞胺(polyimide,PI)薄膜作為特殊工程塑料在變頻電機絕緣設計中得到瞭廣汎應用,方波脈遲電壓下的跼部放電是造成變頻電機絕緣繫統失效的主要原因之一。為探討放電對電機絕緣的損傷作用過程,基于ASTM 227501標準設計一套錶麵放電老化試驗繫統,併對PI薄膜進行老化試驗。錶麵放電使介質錶麵碳化,增加瞭PI薄膜的錶麵電導率,這對錶麵放電活性有較大的影響;藉助掃描電子顯微鏡聚酰亞胺(polyimide,PI)薄膜作為特殊工程塑料在變頻電機絕緣設計中得到瞭廣汎應用,方波脈遲電壓下的跼部放電是造成變頻電機絕緣繫統失效的主要原因之一。為探討放電對電機絕緣的損傷作用過程,基于ASTM 227501標準設計一套錶麵放電老化試驗繫統,併對PI薄膜進行老化試驗。錶麵放電使介質錶麵碳化,增加瞭PI薄膜的錶麵電導率,這對錶麵放電活性有較大的影響;藉助掃描電子顯微鏡觀察瞭不同放電老化階段下PI薄膜錶麵及橫截麵的微觀形貌,髮現PI薄膜的降解是從試樣錶麵逐漸嚮內部髮展的過程;採用傅裏葉紅外光譜(Fourier transform infrared spectroscopy,FTIR)分析瞭PI薄膜在老化前後的FTIR圖譜,髮現 PI 分子主鏈上的醚鍵(C-O-C)和酰亞胺環(C-N-C)鍵在放電老化作用下斷裂,錶麵放電侵蝕造成有機分子鏈斷裂是聚閤物降解的本質原因。
취선아알(polyimide,PI)박막작위특수공정소료재변빈전궤절연설계중득도료엄범응용,방파맥충전압하적국부방전시조성변빈전궤절연계통실효적주요원인지일。위탐토방전대전궤절연적손상작용과정,기우ASTM 227501표준설계일투표면방전노화시험계통,병대PI박막진행노화시험。표면방전사개질표면탄화,증가료PI박막적표면전도솔,저대표면방전활성유교대적영향;차조소묘전자현미경취선아알(polyimide,PI)박막작위특수공정소료재변빈전궤절연설계중득도료엄범응용,방파맥충전압하적국부방전시조성변빈전궤절연계통실효적주요원인지일。위탐토방전대전궤절연적손상작용과정,기우ASTM 227501표준설계일투표면방전노화시험계통,병대PI박막진행노화시험。표면방전사개질표면탄화,증가료PI박막적표면전도솔,저대표면방전활성유교대적영향;차조소묘전자현미경관찰료불동방전노화계단하PI박막표면급횡절면적미관형모,발현PI박막적강해시종시양표면축점향내부발전적과정;채용부리협홍외광보(Fourier transform infrared spectroscopy,FTIR)분석료PI박막재노화전후적FTIR도보,발현 PI 분자주련상적미건(C-O-C)화선아알배(C-N-C)건재방전노화작용하단렬,표면방전침식조성유궤분자련단렬시취합물강해적본질원인。
Polyimide (PI) film is an important type of insulating material used in the inverter-fed motors. Partial discharge (PD) under a sequence of high-frequency square impulses is one of the key factors which lead to premature failure of insulation systems of inverter-fed motors. In order to explore the damage mechanism of PI film caused by discharge, an aging system of surface discharge under bipolar continuous square impulse voltage (BCSIV) was designed based on the ASTM 2275 01 standard and the PI film was tested. The surface conductivity of PI film increases because of the carbonized surface layer caused by surface charge, which would affect the characteristic of surface discharge. The micro-morphology and structure change of PI film aged above partial discharge inception voltage (PDIV) was investigated by Scanning Electron Microscopy (SEM). The degradation path of PI film is initiated from surface and then gradually extends to the interior with continuous aging. The chemical bonds of PI chain were analyzed through Fourier Transform Infrared Spectroscopy (FTIR). The results show that the degradation mechanism of PI film is the fracture of chemical bonds, such as ether bond (C-O-C) and imide ring (C-N-C), caused by the physical and chemical erosion of surface discharge.