CAJ | 학술논문

利用等离子体增强化学气相沉积系统（ PECVD ）研究SiO2薄膜低温制备工艺，分析工艺条件对薄膜性能参数影响，通过调节射频功率优化薄膜应力，在150℃低温下获得接近零应力 SiO2薄膜，薄膜沉积速率约为40 nm/min，片内均匀性优于3％，折射率为1．46±0．003，并具有良好的附着力和抗蚀性能。由于沉积温度低，薄膜性能好，因此可以作为绝缘层或介质层，应用于柔性电子领域。
이용등리자체증강화학기상침적계통（ PECVD ）연구SiO2박막저온제비공예，분석공예조건대박막성능삼수영향，통과조절사빈공솔우화박막응력，재150℃저온하획득접근령응력 SiO2박막，박막침적속솔약위40 nm/min，편내균균성우우3％，절사솔위1．46±0．003，병구유량호적부착력화항식성능。유우침적온도저，박막성능호，인차가이작위절연층혹개질층，응용우유성전자영역。
The preparation of SiO2 film by plasma enhanced chemical vapor deposition ( PECVD) was invertigated.The effectof deposition parameterson the properties of the film was analyzed.The stress of the film by adjusingthe RF power was optimized, Near-zero stressSiO 2 film was prepared at 150 ℃.The depositionrate is around 40 nm/min with thickness uni-formity better than 3%and refractive index in the range of 1.46±0.003.The film had good adhesion and etching resistance. Due to its low temperature and excellent film properties, the film can be applies in flexible electronics as insulationor dielec -tric layers.