CAJ | 학술논문

本文用双源真空蒸发的方法制备了Cd1-xZnx Te薄膜，通过热探针、SEM、XRD及紫外-可见光透过谱等方法研究了不同退火条件对薄膜性质的影响．退火后Cd1-xZnx Te多晶薄膜的光学禁带宽度在1．54 eV ～1．68 eV之间，且沿立方相（111）面择优生长．退火温度主要影响薄膜表面的粗糙度和平均晶粒尺寸，退火时间主要影响薄膜的平均晶粒尺寸．退火温度与时间对薄膜电学性质的影响较小．
본문용쌍원진공증발적방법제비료Cd1-xZnx Te박막，통과열탐침、SEM、XRD급자외-가견광투과보등방법연구료불동퇴화조건대박막성질적영향．퇴화후Cd1-xZnx Te다정박막적광학금대관도재1．54 eV ～1．68 eV지간，차연립방상（111）면택우생장．퇴화온도주요영향박막표면적조조도화평균정립척촌，퇴화시간주요영향박막적평균정립척촌．퇴화온도여시간대박막전학성질적영향교소．
The Cd1-xZnx Te thin films were deposited with vacuum co-evaporation deposition technique using two sources .The influence of annealing with different conditions on the properties of the films was studied by thermal probe ,SEM ,XRD and Ultraviolet-visible spectrometer .The polycrystalline films of Cd1-xZnx Te with the (111) preferred orientation were obtained and the value of the optical band gap varies between 1 .54eV and 1 .68eV . The roughness of the films is influenced by the annealing temperatures and the average grain size of the films is influenced both by temperature and time .The electrical property of the films is little influenced by annealing temperature and time .