CAJ | 학술논문

针对目前高能光子的电离辐射效应极大的影响半导体材料广泛应用的现状，以M OS器件为研究对象，利用高能光子反应截面数据库，采用蒙特卡罗模拟方法，用C语言编写了模拟程序，对高能光子在M OS器件的SiO2层中的输运过程进行了模拟和计算。计算结果表明，M OS器件的电离损伤与SiO2层的厚度关系很大，减小SiO2层的厚度可以明显地减少SiO2中的能量沉积，使得M OS器件的电离损伤减小。
침대목전고능광자적전리복사효응겁대적영향반도체재료엄범응용적현상，이M OS기건위연구대상，이용고능광자반응절면수거고，채용몽특잡라모의방법，용C어언편사료모의정서，대고능광자재M OS기건적SiO2층중적수운과정진행료모의화계산。계산결과표명，M OS기건적전리손상여SiO2층적후도관계흔대，감소SiO2층적후도가이명현지감소SiO2중적능량침적，사득M OS기건적전리손상감소。
T he study is made to solve the problem that the ionizing radiation effect of high-energy photons has a great effect on the application of semiconductor materials .By using high-energy photons cross-section database and the monte carlo simulation code which is written with Cprogramming language ,the reaction process of high-energy photons in SiO2 layer of the MOS device is simulated .The results show that the ionization damage of the MOS device has direct relationship with the thickness of SiO2 layer and the reduction of its thickness can significantly reduce the energy deposition in SiO 2 ,thus reducing the ionization damage to M OS .