CAJ | 학술논문

文章研究了AlGaN/GaN高电子迁移率晶体管(HEMT)的质子辐照效应。在3MeV质子辐照下,采用三种不同辐照剂量6×1014,4×1014和1×1015 protons/cm2。在最高辐照剂量下,漏极饱和电流下降了20%,最大跨导降低了5%。随着剂量增加,阈值电压向正向漂移,栅泄露电流增加。 AlGaN/GaN HEMT电学特性的退化主要是由辐照引入的位移损伤引起的。从SRIM软件计算出空位密度,将Ga空位对应的能级引入Silvaco器件仿真软件中,仿真结果与实验结果相匹配。 Hall测试结果显示二维电子气(2DEG)浓度和迁移率在辐照后有所降低。
문장연구료AlGaN/GaN고전자천이솔정체관(HEMT)적질자복조효응。재3MeV질자복조하,채용삼충불동복조제량6×1014,4×1014화1×1015 protons/cm2。재최고복조제량하,루겁포화전류하강료20%,최대과도강저료5%。수착제량증가,역치전압향정향표이,책설로전류증가。 AlGaN/GaN HEMT전학특성적퇴화주요시유복조인입적위이손상인기적。종SRIM연건계산출공위밀도,장Ga공위대응적능급인입Silvaco기건방진연건중,방진결과여실험결과상필배。 Hall측시결과현시이유전자기(2DEG)농도화천이솔재복조후유소강저。
The proton irradiation effects of GaN-based high electron mobility transistor was studied with protons in the energy 3MeV at fluences varying from 6x1013 ,4x1014 to 1x1015 cm-2 . After proton irradiation of 1x1015 cm-2 , the drain cur-rent and maximum transconductance decreased 20% and 5% respectively. With increasing proton fluence, the threshold voltage has a positive shift,and the gate leakage current increases. The degradation mechanism was proved to irradiation-in-duced displacement damages by the SRIM simulation. Hall effect measurements show that 2DEG density and mobility de-creased after irradiation.